Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: The present invention provides a commercialized Li—S battery is applied in electronic appliance, such as hybrid electric vehicle (HEV), telecommunication, portable electronics, and device for renewable energy like solar and wind. The invention provides a method for manufacturing Li—S battery, comprising the following steps: firstly forming low dimensional materials on one side of a bilayer separator of a Li—S battery is achieved, and then forming a polymer on an other side of the bilayer separator of the Li—S battery to prevent a migration of polysulfide to anode side is completed.

Abstract: The present invention provides a method of preparing a battery electrode, comprising: (a) providing electroactive particles; (b) mixing the electroactive particles with a graphene-based material to form a composite; and (c) spray coating the composite onto a substrate to form the battery electrode; wherein the percentage of the electroactive particles to the graphene-based material is 40-95 wt %. Furthermore, the present invention provides a high performance battery electrode and lithium sulfur battery or Lithium Metal Oxide-Sulfur battery.

Abstract: A LED driving apparatus and an operating method thereof are disclosed. The LED driving apparatus includes a power, at least one LED string, a LED control unit, and an input voltage detection circuit. At least one LED string is coupled to the power and includes LEDs connected in series. The input voltage detection circuit is coupled to two ends of at least one LED of the LEDs respectively and used to judge whether an input voltage is lower than a LED conducting voltage. The input voltage detection circuit includes a charging capacitance to be charged when the at least one LED string is conducted. If the judged result of the input voltage detection circuit is yes, the input voltage detection circuit will control the charging capacitance having a charging voltage to discharge to the at least one LED string.

Abstract: A series control circuit is disclosed. The series control circuit comprises a master driving control module and N driving control modules. The master driving control module receiving an alternative current voltage is used for transmits a command packet via a data line according to a firmware, wherein the command packet comprises an identification code and a work instruction. The driving control module receives the command packet and determines whether a local address code is equal to the identification code. If the local address code is equal to the identification code, the driving control module transmits a driving signal to a designated driving channel. If the local address code is not equal to the identification code, the driving control module transmits the command packet to next driving control module.

Abstract: The present invention provides a method for the preparation of low-dimensional materials, comprising mixing a pristine material to be abraded with an organic solvent to form a mixture, abrading the material to be abraded by bead-milling, obtaining a suspension comprising the material of low dimension and the organic solvent, and removing the organic solvent from the suspension to obtain the low-dimensional material.

Abstract: A driving circuit includes a plurality of light-emitting units, a plurality of switches, and a voltage generating module. The light-emitting units are coupled with each other in series and are driven with an input voltage varying according to a frequency. Each switch has a preset voltage and an activation voltage and includes a light-emitting end, a control end, and a setting end. The light-emitting ends are coupled with the light-emitting units, and the setting ends of the switches are coupled with each other. The voltage generating module includes a plurality of control units and provides a plurality of control voltages to the switches, and each switch is driven to be activated or to be deactivated according to a relation of the preset voltage and a difference between the control voltage and the activation voltage when the input voltage drives the light-emitting units, the switches, and the control units.

Abstract: A light-emitting diode (LED) driver is provided. The LED driver, providing a drive voltage for driving an LED circuit according to an input voltage, includes a current regulator, a dimming signal generator, and a boost converter. In response to a pulse width modulation (PWM) dimming signal, the current regulator enables the LED circuit in a first PWM period and disables the LED circuit outside the first PWM period. The dimming generator generates a prolonged PWM dimming signal according to the PWM dimming signal. The prolonged PWM dimming signal has a prolonged period, a length of which is associated with a level of an input voltage. In response to the prolonged PWM dimming signal, the boost converter is enabled in a second PWM period and maintains a level of the drive voltage according to the input voltage.

Abstract: A driving circuit includes a plurality of light-emitting units, a plurality of switches, and a bias current module, wherein the light-emitting units are coupled with each other in series and are driven with an input voltage varying according to a frequency. Each switch has a reference voltage and a critical activation voltage and includes a light-emitting end and a bias end opposite to the light-emitting end, wherein the light-emitting end is coupled with the light-emitting units, and the bias ends of the switches are coupled with each other. The bias current module is coupled with the bias ends of the switches and has an operating bias voltage varying according to the frequency, wherein each switch is driven to be activated or to be deactivated according to a relation of the critical activation voltage and a difference between the reference voltage and the operating bias voltage.

Abstract: A LED driving apparatus and an operating method thereof are disclosed. The LED driving apparatus includes a power, at least one LED string, a LED control unit, and an input voltage detection circuit. At least one LED string is coupled to the power and includes LEDs connected in series. The input voltage detection circuit is coupled to two ends of at least one LED of the LEDs respectively and used to judge whether an input voltage is lower than a LED conducting voltage. The input voltage detection circuit includes a charging capacitance to be charged when the at least one LED string is conducted. If the judged result of the input voltage detection circuit is yes, the input voltage detection circuit will control the charging capacitance having a charging voltage to discharge to the at least one LED string.

Abstract: A driving circuit includes a plurality of light-emitting units, a plurality of switches, and a voltage generating module. The light-emitting units are coupled with each other in series and are driven with an input voltage varying according to a frequency. Each switch has a preset voltage and an activation voltage and includes a light-emitting end, a control end, and a setting end. The light-emitting ends are coupled with the light-emitting units, and the setting ends of the switches are coupled with each other. The voltage generating module includes a plurality of control units and provides a plurality of control voltages to the switches, and each switch is driven to be activated or to be deactivated according to a relation of the preset voltage and a difference between the control voltage and the activation voltage when the input voltage drives the light-emitting units, the switches, and the control units.

Abstract: An LCD panel includes a first substrate, a second substrate, a displaying medium and a sealing structure, wherein the second substrate is located at the side opposite to the first substrate and the displaying medium is located between the first substrate and the second substrate for displaying an image. The sealing structure is located between the first substrate and the second substrate to seal the displaying medium, wherein the sealing structure includes an inner wall, an outer wall and a sealant. The inner wall disposed surrounding the displaying medium and the outer wall disposed surrounding the inner wall together form a sealant-disposing space therebetween. The outer wall has a plurality of side wall holes and the sealant is disposed in the sealant-disposing space. In this way, the sealing structure is able to enhance the structure strength in a limited layout space and promote the process margin.

Abstract: An electrophoresis display panel includes a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels, and a plurality of white sub-pixels. The first sub-pixels, the second sub-pixels, and the third sub-pixels are suitable for irradiating different light of three primary colors, respectively, while the white sub-pixels are suitable for irradiating white light. Each of the first sub-pixels does not adjoin the second sub-pixels and the third sub-pixels. Each of the second sub-pixels does not adjoin the third sub-pixels. Each of the first sub-pixels adjoins the white sub-pixels exclusively or adjoins the white sub-pixels and other first sub-pixels exclusively.