Abstract: A manufacturing method of an electronic device includes: forming a conductive material layer on a substrate, the conductive material layer continuously extends from a first surface of the substrate to a second surface while passing through a side surface, wherein the side surface connects the first surface and the second surface, forming a first protection layer on the conductive material layer and patterning the conductive material layer by using the first protection layer as a mask to form an edge wire, wherein the edge wire is retracted relative to the first protection layer and forms an undercut structure, and forming a second protection layer on the substrate, wherein the second protection layer fills the undercut structure.

Abstract: A manufacturing method of an electronic device includes: forming a conductive material layer on a substrate, the conductive material layer continuously extends from a first surface of the substrate to a second surface while passing through a side surface, wherein the side surface connects the first surface and the second surface, forming a first protection layer on the conductive material layer and patterning the conductive material layer by using the first protection layer as a mask to form an edge wire, wherein the edge wire is retracted relative to the first protection layer and forms an undercut structure, and forming a second protection layer on the substrate, wherein the second protection layer fills the undercut structure.

Abstract: An electronic device includes a substrate, a side wiring, a protective film, and a first filler. The substrate has a first surface, a second surface, and a side surface connected between the first surface and the second surface. The side wiring is disposed on the substrate and extends from the first surface to the second surface through the side surface. The protective film is disposed on the side wiring. The side wiring is sandwiched between the substrate and the protective film. An edge of the protective film extends beyond a side wall of the side wiring, and the protective film, the side wall of the side wiring, and the substrate define a gap. The first filler is disposed on the protective film and in the gap, wherein the first filler includes a first material and a plurality of particles mixed within the first material.

Abstract: A panel device including a substrate, a conductor pad, a turning wire, and a circuit board is provided. The substrate has a first surface and a second surface connected to the first surface while a normal direction of the second surface is different from a normal direction of the first surface. The conductor pad is disposed on the first surface of the substrate. The turning wire is disposed on the substrate and extends from the first surface to the second surface. The turning wire includes a wiring layer in contact with the conductor pad and a wire covering layer covering the wiring layer. The circuit board is bonded to and electrically connected to the wire covering layer. A manufacturing method of a panel device is also provided herein.

Abstract: An electronic device, including a substrate, an edge wire, a first protection layer, and a second protection layer, is provided. The substrate has a first surface, a second surface, and a side surface connecting the first surface and the second surface. A normal vector of the side surface is different from the first surface and the second surface. The edge wire is configured on the substrate, extending from the first surface to the second surface while passing through the side surface. The first protection layer is configured on the edge wire. The edge wire is sandwiched between the substrate and the first protection layer. The edge wire and the first protection layer form an undercut structure. The second protection layer is configured on the substrate and fills the undercut structure. A manufacturing method of an electronic device is also provided.

Abstract: A driver chip is provided. The driver chip includes a light-emitting module and a wafer substrate. The light-emitting module has multiple pins. The wafer substrate has a first surface and a second surface. The wafer substrate includes a photodiode, an image sensing circuit, and a light-emitting driving circuit. The photodiode is disposed on the second surface of the wafer substrate. The image sensing circuit is disposed in the wafer substrate and is electrically connected to the photodiode to drive the photodiode. The light-emitting driving circuit is disposed in the wafer substrate, and is electrically connected to the multiple pins of the light-emitting module via multiple connection units on the first surface of the wafer substrate to drive the light-emitting module.

Abstract: A high-speed buffer amplifier includes an input stage including a first channel coupled to receive differential inputs and a second channel coupled to receive the differential inputs; a middle stage including a first current source coupled to receive outputs of the second channel and electrically connected to power, a second current source coupled to receive outputs of the first channel and electrically connected to ground, and a floating current source electrically connected between the first current source and the second current source; and an output stage coupled to the middle stage to generate an output voltage. A shunt circuit is electrically connected between the first current source and the second current source, and configured to bypass the floating current source.

Abstract: A high-speed buffer amplifier includes an input stage including a first channel coupled to receive differential inputs and a second channel coupled to receive the differential inputs; a middle stage including a first current source coupled to receive outputs of the second channel and electrically connected to power, a second current source coupled to receive outputs of the first channel and electrically connected to ground, and a floating current source electrically connected between the first current source and the second current source; and an output stage coupled to the middle stage to generate an output voltage. A shunt circuit is electrically connected between the first current source and the second current source, and configured to bypass the floating current source.

Abstract: A panel device including a substrate, a conductor pad, a turning wire, and a circuit board is provided. The substrate has a first surface and a second surface connected to the first surface while a normal direction of the second surface is different from a normal direction of the first surface. The conductor pad is disposed on the first surface of the substrate. The turning wire is disposed on the substrate and extends from the first surface to the second surface. The turning wire includes a wiring layer in contact with the conductor pad and a wire covering layer covering the wiring layer. The circuit board is bonded to and electrically connected to the wire covering layer. A manufacturing method of a panel device is also provided herein.

Abstract: An electronic device, including a substrate, an edge wire, a first protection layer, and a second protection layer, is provided. The substrate has a first surface, a second surface, and a side surface connecting the first surface and the second surface. A normal vector of the side surface is different from the first surface and the second surface. The edge wire is configured on the substrate, extending from the first surface to the second surface while passing through the side surface. The first protection layer is configured on the edge wire. The edge wire is sandwiched between the substrate and the first protection layer. The edge wire and the first protection layer form an undercut structure. The second protection layer is configured on the substrate and fills the undercut structure. A manufacturing method of an electronic device is also provided.

Abstract: The present invention includes a current integrator for an organic light-emitting diode (OLED) panel. The current integrator includes an operational amplifier, which includes an output stage. The output stage, coupled to an output terminal of the current integrator, includes a first output transistor, a second output transistor, a first stack transistor and a second stack transistor. The first stack transistor is coupled between the first output transistor and the output terminal. The second stack transistor is coupled between the second output transistor and the output terminal.

Abstract: A display device includes a substrate, multiple spacers, multiple conductive particles, and a colloid layer. The spacers are disposed on the substrate. Each spacer has a first end closer to the substrate and a second end farther from the substrate, in which a width of the spacer is tapered from the first end to the second end. The conductive particles are disposed between the spacers. The colloid layer is disposed on the conductive particles and the spacers. A mother board is also disclosed.

Abstract: A current sensor including a voltage generation circuit and a voltage integration circuit is provided. The voltage generation circuit is configured to generate a first voltage according to a current to be sensed. The voltage integration circuit is coupled to the voltage generation circuit and configured to receive the first voltage and a second voltage to generate an output voltage. The voltage integration circuit includes a first amplifier, a second amplifier and a first capacitor. The first amplifier is configured to receive the first voltage and the second voltage to generate a third voltage. The second amplifier is coupled to the first amplifier and configured to receive the third voltage to generate the output voltage. The first capacitor is coupled between an output terminal of the voltage generation circuit and an output terminal of the first amplifier and configured to reduce a voltage difference between the first voltage and the second voltage.

Abstract: The present invention includes a current integrator for an organic light-emitting diode (OLED) panel. The current integrator includes an operational amplifier, which includes an output stage. The output stage, coupled to an output terminal of the current integrator, includes a first output transistor, a second output transistor, a first stack transistor and a second stack transistor. The first stack transistor is coupled between the first output transistor and the output terminal. The second stack transistor is coupled between the second output transistor and the output terminal.

Abstract: A current sensor including a voltage generation circuit and a voltage integration circuit is provided. The voltage generation circuit is configured to generate a first voltage according to a current to be sensed. The voltage integration circuit is coupled to the voltage generation circuit and configured to receive the first voltage and a second voltage to generate an output voltage. The voltage integration circuit includes a first amplifier, a second amplifier and a first capacitor. The first amplifier is configured to receive the first voltage and the second voltage to generate a third voltage. The second amplifier is coupled to the first amplifier and configured to receive the third voltage to generate the output voltage. The first capacitor is coupled between an output terminal of the voltage generation circuit and an output terminal of the first amplifier and configured to reduce a voltage difference between the first voltage and the second voltage.

Abstract: An operational amplifier circuit is provided. The operational amplifier circuit includes a differential input stage circuit and a loading stage circuit. The differential input stage circuit includes an input circuit, a voltage maintaining circuit, and a current source. The input circuit includes a first input transistor and a second input transistor, for receiving a first and a second input signals, respectively. The voltage maintaining circuit includes a first branch circuit and a second branch circuit. The first branch circuit is coupled to the first input transistor for receiving the first input signal, and the second branch circuit is coupled to the second input transistor for receiving the second input signal. The current source is coupled to the first input transistor and the second input transistor. The loading stage circuit is coupled to the voltage maintaining circuit.

Abstract: An operational amplifier circuit is provided. The operational amplifier circuit includes a differential input stage circuit and a loading stage circuit. The differential input stage circuit includes an input circuit, a voltage maintaining circuit, and a current source. The input circuit includes a first input transistor and a second input transistor, for receiving a first and a second input signals, respectively. The voltage maintaining circuit includes a first branch circuit and a second branch circuit. The first branch circuit is coupled to the first input transistor for receiving the first input signal, and the second branch circuit is coupled to the second input transistor for receiving the second input signal. The current source is coupled to the first input transistor and the second input transistor. The loading stage circuit is coupled to the voltage maintaining circuit.

Abstract: An operational amplifier circuit is provided. The operational amplifier circuit includes a differential input stage circuit and a loading stage circuit. The differential input stage circuit includes an input circuit, a voltage maintaining circuit, and a current source. The input circuit includes a first input transistor and a second input transistor, for receiving a first and a second input signals, respectively. The voltage maintaining circuit includes a first branch circuit and a second branch circuit. The first branch circuit is coupled to the first input transistor for receiving the first input signal, and the second branch circuit is coupled to the second input transistor for receiving the second input signal. The current source is coupled to the first input transistor and the second input transistor. The loading stage circuit is coupled to the voltage maintaining circuit.

Abstract: An operational amplifier circuit is provided. The operational amplifier circuit includes a differential input stage circuit and a loading stage circuit. The differential input stage circuit includes a first current source, a first transistor, a second transistor, a third transistor, and a fourth transistor. The control terminal of the first transistor receives a first input signal. The control terminal of the second transistor receives a second input signal. The third transistor has a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the first current source, and a control terminal coupled to the control terminal of the second transistor. The fourth transistor has a first terminal coupled to the second terminal of the second transistor, a second terminal coupled to the first current source, and a control terminal coupled to the control terminal of the first transistor.

Abstract: An operational amplifier circuit is provided. The operational amplifier circuit includes a differential input stage circuit and a loading stage circuit. The differential input stage circuit includes an input circuit, a voltage maintaining circuit, and a current source. The input circuit includes a first input transistor and a second input transistor, for receiving a first and a second input signals, respectively. The voltage maintaining circuit includes a first branch circuit and a second branch circuit. The first branch circuit is coupled to the first input transistor for receiving the first input signal, and the second branch circuit is coupled to the second input transistor for receiving the second input signal. The current source is coupled to the first input transistor and the second input transistor. The loading stage circuit is coupled to the voltage maintaining circuit.