Patents by Inventor Chih Y. Yang

Chih Y. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shallow trench isolation spacer for weff improvement
    Patent number: 6566230
    Abstract: A method for performing trench isolation during semiconductor device fabrication is disclosed. The method includes patterning a hard mask to define active areas and isolations areas on a substrate, and forming spacers along edges of the hard mask. Trenches are then formed in the substrate using the spacers as a mask, thereby increasing the width of the substrate under the active areas and increasing Weff for the device.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: May 20, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Harpreet K. Sachar, Unsoon Kim, Mark S. Chang, Chih Y. Yang, Jayendra D. Bhakta