Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A wearable device includes a host, a first belt, a second belt, a circuit board, a cable, and an adjustment mechanism. The first belt, one end of which is connected to a first side of the host, has a cable holding part. One end of the second belt is connected to a second side of the host. The circuit board is disposed at an overlap of the first belt and the second belt. A first end and a second end opposite to each other of the cable are connected to the circuit board and the first side respectively, and a holding section of the cable is fixed to the cable holding part. The adjusting mechanism is disposed at an overlap of the first belt and the second belt to adjust an overlapping length of the first belt and the second belt.

Abstract: A method of forming dialkyl carbonate is provided, which includes introducing carbon dioxide into a catalyst to form dialkyl carbonate, wherein the catalyst is formed by activating a catalyst precursor using alcohol, wherein alcohol is R3—OH, and R3 is C1-12 alkyl group or C5-12 aryl or heteroaryl group. The catalyst precursor is formed by reacting Sn(R1)2(L)2 and Ti(OR2)4, and Sn(R1)2(L)2 and Ti(OR2)4 have a molar ratio of 1:2 to 2:1. R1 is C1-10 alkyl group, R2 is H or C1-12 alkyl group, and L is O—(C?O)—R5, and R5 is C1-12 alkyl group.

Abstract: A method of forming dialkyl carbonate is provided, which includes introducing carbon dioxide into a catalyst to form dialkyl carbonate, wherein the catalyst is formed by activating a catalyst precursor using alcohol, wherein alcohol is R3—OH, and R3 is C1-12 alkyl group or C5-12 aryl or heteroaryl group. The catalyst precursor is formed by reacting Sn(R1)2(L)2 and Ti(OR2)4, and Sn(R1)2(L)2 and Ti(OR2)4 have a molar ratio of 1:2 to 2:1. R1 is C1-10 alkyl group, R2 is H or C1-12 alkyl group, and L is O—(C?O)—R5, and R5 is C1-12 alkyl group.

Abstract: A method of forming dialkyl carbonate is provided, which includes introducing carbon dioxide into a catalyst to form dialkyl carbonate, wherein the catalyst is formed by activating a catalyst precursor using alcohol, wherein alcohol is R3—OH, and R3 is C1-12 alkyl group or C5-12 aryl or heteroaryl group. The catalyst precursor is formed by reacting Sn(R1)2(L)2 and Ti(OR2)4, and Sn(R1)2(L)2 and Ti(OR2)4 have a molar ratio of 1:2 to 2:1. R1 is C1-10 alkyl group, R2 is H or C1-12 alkyl group, and L is O—(C?O)—R5, and R5 is C1-12 alkyl group.

Abstract: A method of forming dialkyl carbonate is provided, which includes introducing carbon dioxide into a catalyst to form dialkyl carbonate, wherein the catalyst is formed by activating a catalyst precursor using alcohol, wherein alcohol is R3—OH, and R3 is C1-12 alkyl group or C5-12 aryl or heteroaryl group. The catalyst precursor is formed by reacting Sn(R1)2(L)2 and Ti(OR2)4, and Sn(R1)2(L)2 and Ti(OR2)4 have a molar ratio of 1:2 to 2:1. R1 is C1-10 alkyl group, R2 is H or C1-12 alkyl group, and L is O—(C?O)—R5, and R5 is C1-12 alkyl group.

Abstract: The present invention provides a sustained release oral dosage form containing dalfampridine that can be administered once daily. The dosage form includes dalfampridine as the active pharmaceutical ingredient and the excipients comprising osmotic agents in a tablet core. The sustained release oral dosage form of the present invention can be administrated once daily and can provide a proper fluctuation index to reduce undesired adverse effect, prevent alcohol-induced dose dumping and release drug at a rate sufficient to maintain certain drug plasma concentration.

Abstract: The present invention provides a sustained release oral dosage form containing dalfampridine that can be administered once daily. The dosage form includes dalfampridine as the active pharmaceutical ingredient and the excipients comprising osmotic agents in a tablet core. The sustained release oral dosage form of the present invention can be administrated once daily and can provide a proper fluctuation index to reduce undesired adverse effect, prevent alcohol-induced dose dumping and release drug at a rate sufficient to maintain certain drug plasma concentration.