Patents by Inventor Chih-Yi Chang

Chih-Yi Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230154850
    Abstract: A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or alternatively, the carbon-based liner reduces contact resistance at an interface between the at least one liner material and the copper conductive structure. A carbon-based cap may additionally or alternatively be deposited on a metal cap, over the copper conductive structure, to reduce surface scattering at an interface between the metal cap and an additional copper conductive structure deposited over the metal cap.
    Type: Application
    Filed: January 11, 2022
    Publication date: May 18, 2023
    Inventors: Shu-Cheng CHIN, Chih-Yi CHANG, Chih-Chien CHI, Ming-Hsing TSAI
  • Patent number: 11527476
    Abstract: A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: December 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yao-Min Liu, Chia-Pang Kuo, Chien Chung Huang, Chih-Yi Chang, Ya-Lien Lee, Chun-Chieh Lin, Hung-Wen Su, Ming-Hsing Tsai
  • Publication number: 20220367266
    Abstract: A method includes forming a first conductive feature, depositing a graphite layer over the first conductive feature, patterning the graphite layer to form a graphite conductive feature, depositing a dielectric spacer layer on the graphite layer, depositing a first dielectric layer over the dielectric spacer layer, planarizing the first dielectric layer, forming a second dielectric layer over the first dielectric layer, and forming a second conductive feature in the second dielectric layer. The second conductive feature is over and electrically connected to the graphite conductive feature.
    Type: Application
    Filed: July 21, 2021
    Publication date: November 17, 2022
    Inventors: Shu-Cheng Chin, Chih-Yi Chang, Wei Hsiang Chan, Chih-Chien Chi, Chi-Feng Lin, Hung-Wen Su
  • Publication number: 20220084937
    Abstract: A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.
    Type: Application
    Filed: January 7, 2021
    Publication date: March 17, 2022
    Inventors: Yao-Min Liu, Chia-Pang Kuo, Chien Chung Huang, Chih-Yi Chang, Ya-Lien Lee, Chun-Chieh Lin, Hung-Wen Su, Ming-Hsing Tsai
  • Publication number: 20220068826
    Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
    Type: Application
    Filed: August 25, 2020
    Publication date: March 3, 2022
    Inventors: Chia-Pang Kuo, Chih-Yi Chang, Ming-Hsiao Hsieh, Wei-Hsiang Chan, Ya-Lien Lee, Chien Chung Huang, Chun-Chieh Lin, Hung-Wen Su
  • Patent number: 9786604
    Abstract: A method of forming a metal layer may include forming an opening in a substrate; forming a liner over sidewalls of the opening; filling the opening with a first metal; etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate; and exposing the recessed top surface of the first metal to a solution, the solution containing a second metal different from the first metal, the exposing causing the recessed top surface of the first metal to attract the second metal to form a cap layer over the recessed top surface of the first metal.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: October 10, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Yuan Kao, Hung-Wen Su, Chih-Yi Chang, Liang-Yueh Ou Yang
  • Patent number: 9632498
    Abstract: A computer-implemented system and method of compensating for filling material losses in a semiconductor process. The computer-implemented method includes determining using a computer a pattern density difference between a first circuit pattern above a semiconductor substrate and a second circuit pattern adjacent to the first pattern. A dummy pattern is inserted between the first pattern and the second pattern so as to compensate for an estimated loss of filling material induced during electrochemical plating by the pattern density difference exceeding a threshold pattern density difference.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: April 25, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Yi Chang, Liang-Yueh Ou Yang, Chen-Yuan Kao, Hung-Wen Su
  • Patent number: 9476135
    Abstract: The present disclosure relates to an electro-chemical plating (ECP) process which utilizes a dummy electrode as a cathode to perform plating for sustained idle times to mitigate additive dissociation. The dummy electrode also allows for localized plating function to improve product gapfill, and decrease wafer non-uniformity. A wide range of electroplating recipes may be applied with this strategy, comprising current plating up to approximately 200 Amps, localized plating with a resolution of approximately 1 mm, and reverse plating to remove material from the dummy electrode accumulated during the dummy plating process and replenish ionic material within the electroplating solution.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: October 25, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Yi Chang, Liang-Yueh Ou Yang, Chen-Yuan Kao, Hung-Wen Su
  • Publication number: 20160064332
    Abstract: A method of forming a metal layer may include forming an opening in a substrate; forming a liner over sidewalls of the opening; filling the opening with a first metal; etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate; and exposing the recessed top surface of the first metal to a solution, the solution containing a second metal different from the first metal, the exposing causing the recessed top surface of the first metal to attract the second metal to form a cap layer over the recessed top surface of the first metal.
    Type: Application
    Filed: November 10, 2015
    Publication date: March 3, 2016
    Inventors: Chen-Yuan Kao, Hung-Wen Su, Chih-Yi Chang, Liang-Yueh Ou Yang
  • Patent number: 9209073
    Abstract: Presented herein is a method for electrolessly forming a metal cap in a via opening, comprising bringing a via into contact with metal solution, the via disposed in an opening in a substrate, and forming a metal cap in the opening and in contact with the via, the metal cap formed by an electroless chemical reaction. A metal solution may be applied to the via to form the metal cap. The metal solution may comprises at least cobalt and the cap may comprise at least cobalt, and may optionally further comprise tungsten, and wherein the forming the cap comprises forming the cap to further comprise at least tungsten. The metal solution may further comprise at least hypophosphite or dimethylaminoborane.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: December 8, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Liang-Yueh Ou Yang, Chih-Yi Chang, Chen-Yuan Kao, Hung-Wen Su
  • Patent number: 9085696
    Abstract: The present invention provides a novel black photosensitive resin composition, which includes: a polysiloxane, a black pigment, an alkali-soluble resin, a photopolymerizable compound, a photopolymerization initiator and a solvent. Accordingly, the black photosensitive resin composition of the present invention can meet the requirements for optical density and resistance under high temperature and is advantageous to the application in a touch panel. In addition, the present invention further provides a light-blocking layer that is manufactured from the black photosensitive resin composition.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: July 21, 2015
    Assignee: EVERLIGHT USA, INC.
    Inventors: Fan-Sen Lin, Hui-Huan Hsu, Bo-Nan Lin, Chih-Yi Chang
  • Publication number: 20140262797
    Abstract: The present disclosure relates to an electro-chemical plating (ECP) process which utilizes a dummy electrode as a cathode to perform plating for sustained idle times to mitigate additive dissociation. The dummy electrode also allows for localized plating function to improve product gapfill, and decrease wafer non-uniformity. A wide range of electroplating recipes may be applied with this strategy, comprising current plating up to approximately 200 Amps, localized plating with a resolution of approximately 1 mm, and reverse plating to remove material from the dummy electrode accumulated during the dummy plating process and replenish ionic material within the electroplating solution.
    Type: Application
    Filed: April 9, 2013
    Publication date: September 18, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Yi Chang, Liang-Yueh Ou Yang, Chen-Yuan Kao, Hung-Wen Su
  • Publication number: 20140277681
    Abstract: A computer-implemented system and method of compensating for filling material losses in a semiconductor process. The computer-implemented method includes determining using a computer a pattern density difference between a first circuit pattern above a semiconductor substrate and a second circuit pattern adjacent to the first pattern. A dummy pattern is inserted between the first pattern and the second pattern so as to compensate for an estimated loss of filling material induced during electrochemical plating by the pattern density difference exceeding a threshold pattern density difference.
    Type: Application
    Filed: April 25, 2013
    Publication date: September 18, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Yi CHANG, Liang-Yueh Ou YANG, Chen-Yuan KAO, Hung-Wen SU
  • Publication number: 20140100301
    Abstract: The present invention provides a novel black photosensitive resin composition, which includes: a polysiloxane, a black pigment, an alkali-soluble resin, a photopolymerizable compound, a photopolymerization initiator and a solvent. Accordingly, the black photosensitive resin composition of the present invention can meet the requirements for optical density and resistance under high temperature and is advantageous to the application in a touch panel. In addition, the present invention further provides a light-blocking layer that is manufactured from the black photosensitive resin composition.
    Type: Application
    Filed: April 10, 2013
    Publication date: April 10, 2014
    Applicant: Everlight USA, Inc.
    Inventors: Fan-Sen LIN, Hui-Huan HSU, Bo-Nan LIN, Chih-Yi CHANG
  • Publication number: 20110294067
    Abstract: A photosensitive resin composition is disclosed. The photosensitive resin composition includes an alkali soluble resin with an epoxy structure, a photopolymerizable compound having an ethylenically unsaturated bond, a photoinitiator, and a thermal curing agent. The photosensitive resin composition provides great surface hardness, adhesion and transmittance to meet industrial requirements.
    Type: Application
    Filed: March 24, 2011
    Publication date: December 1, 2011
    Applicant: EVERLIGHT USA, INC.
    Inventors: Chih-Han Chao, Chun-Chin Chou, Yu-Ling Lin, Chih-Yi Chang
  • Patent number: 7394503
    Abstract: Successive video signals of a first frame and a second frame are received. A signal difference between the video signals is determined and filtered to obtain a luminance difference. A signal sum of the video signals is determined and filtered to obtain a luminance sum. The luminance sum is subtracted from the signal sum to obtain a chrominance difference.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: July 1, 2008
    Assignees: National Sun Yat-Sen University, Himax Technologies Limited
    Inventors: Chua-Chin Wang, Chih-Yi Chang, Fung-Jane Chang
  • Patent number: 7273538
    Abstract: A surface mountable laminated circuit protection device comprises a first metal layer including a first unit and a second unit, a first insulating layer disposed on the first metal layer, and a second metal layer disposed on the first insulated layer. There is also a composite electroplated layer containing carbon black disposed on the second metal layer, and a first conductive composite material having positive temperature coefficient (PTC) characteristics disposed on the composite electroplated layer containing carbon black. Above the first conductive composite material is a third metal layer. Furthermore, there is a first conducting mechanism for conducting the first metal layer and the second metal to each other; and a second conducting mechanism for conducting the third metal layer and the first metal layer to each other. The application of double-sided metal foil clad substrate simplifies the production process of the protection device and improves its structural strength and dimensional stability.
    Type: Grant
    Filed: September 25, 2003
    Date of Patent: September 25, 2007
    Assignee: Protectronics Technology Corporation
    Inventors: Rei-Yian Chen, Chih-Yi Chang, Tung-Hsiang Liu
  • Publication number: 20070002171
    Abstract: Successive video signals of a first frame and a second frame are received. A signal difference between the video signals is determined and filtered to obtain a luminance difference. A signal sum of the video signals is determined and filtered to obtain a luminance sum. The luminance sum is subtracted from the signal sum to obtain a chrominance difference.
    Type: Application
    Filed: June 30, 2005
    Publication date: January 4, 2007
    Applicants: National Sun Yat-Sen University, Himax Technologies, Inc.
    Inventors: Chua-Chin Wang, Chih-Yi Chang, Fung-Jane Chang
  • Patent number: 6873244
    Abstract: The present invention discloses a surface mountable laminated thermistor device which utilizes current-used double sided metal foil clad substrate as a base material and a PTC conductive composite that complies with circuit connection design combinations among electrodes to obtain a surface mountable laminated thermistor device with a parallel manner, and vastly simplify the fabrication process of the surface mountable laminated thermistor device.
    Type: Grant
    Filed: May 19, 2003
    Date of Patent: March 29, 2005
    Assignee: Protectronics Technology Corporation
    Inventors: Chien-Shan Huang, Ren-Haur Hwang, Chih-Yi Chang
  • Publication number: 20040069645
    Abstract: A surface mountable laminated circuit protection device comprises a first metal layer including a first unit and a second unit, a first insulating layer disposed on the first metal layer, and a second metal layer disposed on the first insulated layer. There is also a composite electroplated layer containing carbon black disposed on the second metal layer, and a first conductive composite material having positive temperature coefficient (PTC) characteristics disposed on the composite electroplated layer containing carbon black. Above the first conductive composite material is a third metal layer. Furthermore, there is a first conducting mechanism for conducting the first metal layer and the second metal to each other; and a second conducting mechanism for conducting the third metal layer and the first metal layer to each other. The application of double-sided metal foil clad substrate simplifies the production process of the protection device and improves its structural strength and dimensional stability.
    Type: Application
    Filed: September 25, 2003
    Publication date: April 15, 2004
    Applicant: PROTECTRONICS TECHNOLOGY CORPORATION
    Inventors: Rei-Yian Chen, Chih-Yi Chang, Tung-Hsiang Liu