Abstract: The present invention relates to a sensor chip for biomedical and micro-nano structured substances and a method for manufacturing the same. The sensor chip includes plural metal nanoparticles and a porous anodized aluminum oxide film. The plural metal nanoparticles are completely contained in holes of the porous anodized aluminum oxide film and located at the bottom of the holes, and an aluminum oxide layer covering the second end of the holes has a thickness of 1 nm to 300 nm. When analytes such as biomedical molecules are provided in contact with the sensor chip, a Raman signal can be detected based on the Raman spectroscopy. The structure of the sensor chip of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the sensor chip of the present invention is of great commercial value. Also, a method of manufacturing the above sensor chip is disclosed.

Abstract: A photo-sensitive composite film is disclosed, which includes plural metal nano-particles and a porous anodized aluminum oxide film. The nanoparticles can be hollow or solid with unrestricted shapes of varying diameters and lengths. The plural metal nanoparticles are completely contained in holes and attached to the bottom of the holes of the anodized aluminum oxide film, and the electrical conductivity of the photo-sensitive anodized aluminum oxide film can be changed by light exposure on the metal nanoparticles from surfaces of the anodized aluminum oxide film. The structure of the photo-sensitive anodized aluminum oxide film of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the photo-sensitive anodized aluminum oxide film of the present invention is of great commercial value. Also, a method of manufacturing the above photo-sensitive composite film and a photo-switched device including the same are disclosed.

Abstract: The present invention relates to a sensor chip for biomedical and micro-nano structured substances and a method for manufacturing the same. The sensor chip includes plural metal nanoparticles and a porous anodized aluminum oxide film. The plural metal nanoparticles are completely contained in holes of the porous anodized aluminum oxide film and located at the bottom of the holes, and an aluminum oxide layer covering the second end of the holes has a thickness of 1 nm to 300 nm. When analytes such as biomedical molecules are provided in contact with the sensor chip, a Raman signal can be detected based on the Raman spectroscopy. The structure of the sensor chip of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the sensor chip of the present invention is of great commercial value. Also, a method of manufacturing the above sensor chip is disclosed.

Abstract: A photo-sensitive composite film is disclosed, which includes plural metal nano-particles and a porous anodized aluminum oxide film. The nanoparticles can be hollow or solid with unrestricted shapes of varying diameters and lengths. The plural metal nanoparticles are completely contained in holes and attached to the bottom of the holes of the anodized aluminum oxide film, and the electrical conductivity of the photo-sensitive anodized aluminum oxide film can be changed by light exposure on the metal nanoparticles from surfaces of the anodized aluminum oxide film. The structure of the photo-sensitive anodized aluminum oxide film of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the photo-sensitive anodized aluminum oxide film of the present invention is of great commercial value. Also, a method of manufacturing the above photo-sensitive composite film and a photo-switched device including the same are disclosed.

Abstract: A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.

Abstract: This invention relates to methods of preparing substrates that enhance the Raman signal of analytes in surface-enhanced Raman spectroscopy (SERS). The SERS-active substrate comprises an array of metal nanoparticles at least partially embedded in a template. The substrate's uniform and readily reproducible SERS-active properties with a wide range of analyte concentrations substantially enhance the power and utility of SERS. This invention also provides sensors, as well as Raman instruments, comprising the SERS-active substrates.

Abstract: A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiO3 and the resistor layer includes doped SrZrO3.

Abstract: This invention relates to methods of preparing substrates that enhance the Raman signal of analytes in surface-enhanced Raman spectroscopy (SERS). The SERS-active substrate comprises an array of metal nanoparticles at least partially embedded in a template. The substrate's uniform and readily reproducible SERS-active properties with a wide range of analyte concentrations substantially enhance the power and utility of SERS. This invention also provides sensors, as well as Raman instruments, comprising the SERS-active substrates.

Abstract: A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.

Abstract: A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiO3 and the resistor layer includes doped SrZrO3.