Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: A filter device includes one or more filter membranes, and a filter housing enclosing the one or more filter membranes. Each of the filter membranes includes a base membrane made of a ceramic material, and a plurality of through holes. The base membrane is coated with a coating material.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength ?; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.

Abstract: A laser welding mechanism includes a main body having a space and two securing devices which are respectively attached to two ends of the body. A linkage assembly includes a bearing and a linkage tube. A refraction mirror unit includes two mirrors connected to the linkage tube of the linkage assembly. A laser unit is pivotally connected to a swinging member which is connected to the linkage tube of the linkage assembly. A drive unit including a motor, a driving gear, and a driven gear. A rotation unit is connected to the swinging member of the laser unit. The laser unit rotates relative to the first workpiece and the second workpiece during welding, ensuring a stable rotation at the joining faces of the two workpieces.

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes an active region including a channel region and a source/drain region and extending along a first direction, and a source/drain contact structure over the source/drain region. The source/drain contact structure includes a base portion extending lengthwise along a second direction perpendicular to the first direction, and a via portion over the base portion. The via portion tapers away from the base portion.

Abstract: A method includes: generating a contaminant distribution map by sampling an environment of a cleanroom; selecting a first fabrication tool of the cleanroom by comparing the contaminant distribution map with at least one diffusion image in a first database; comparing parameters of the first fabrication tool against process utility information in a second database; and when the parameters are consistent with the process utility information, taking at least one action. The one action may include moving a cleaning tool to a location associated with a contaminant concentration of the contaminant distribution map; turning on a fan of the cleaning tool; stopping pod transit to the first fabrication tool; or halting production by the first fabrication tool.

Abstract: A projector, a 3D sensing module and a method for fabricating the projector are provided. The 3D sensing module includes the projector and a receiver. The projector is configured to project a light beam to an object, and the receiver is configured to receive the light beam reflected from the object. The projector includes a circuit board, electronic components, a holder and a lens module. The circuit board has a plurality of first bonding pads and a plurality of second bonding pads on a top surface of the circuit board. The electronic components are bonded on the first bonding pads. The holder has a cavity and third bonding pads bonded on and electrically connected to the second bonding pads. The lens module is disposed in the cavity of the holder.

Abstract: An optical film stack including a DOE, a first detecting circuit layer, a liquid crystal changeable diffuser, and a conductive structure is provided. The first detecting circuit layer is disposed on the DOE. The liquid crystal changeable diffuser is disposed beside the DOE and includes a first transparent substrate, a second detecting circuit layer, a second transparent substrate, a third detecting circuit layer, and a liquid crystal layer. The second detecting circuit layer is disposed on the first transparent substrate. The second transparent substrate is disposed beside the first transparent substrate. The third detecting circuit layer is disposed on the second transparent substrate. The liquid crystal layer is disposed between the first transparent substrate and the second transparent substrate. The conductive structure electrically connects the first detecting circuit layer, the second detecting circuit layer, and the third detecting circuit layer.

Abstract: An optical film stack including a DOE, a first detecting circuit layer, a liquid crystal changeable diffuser, and a conductive structure is provided. The first detecting circuit layer is disposed on the DOE. The liquid crystal changeable diffuser is disposed beside the DOE and includes a first transparent substrate, a second detecting circuit layer, a second transparent substrate, a third detecting circuit layer, and a liquid crystal layer. The second detecting circuit layer is disposed on the first transparent substrate. The second transparent substrate is disposed beside the first transparent substrate. The third detecting circuit layer is disposed on the second transparent substrate. The liquid crystal layer is disposed between the first transparent substrate and the second transparent substrate. The conductive structure electrically connects the first detecting circuit layer, the second detecting circuit layer, and the third detecting circuit layer.

Abstract: A projector, a 3D sensing module and a method for fabricating the projector are provided. The 3D sensing module includes the projector and a receiver. The projector is configured to project a light beam to an object, and the receiver is configured to receive the light beam reflected from the object. The projector includes a circuit board, electronic components, a holder and a lens module. The circuit board has a plurality of first bonding pads and a plurality of second bonding pads on a top surface of the circuit board. The electronic components are bonded on the first bonding pads. The holder has a cavity and third bonding pads bonded on and electrically connected to the second bonding pads. The lens module is disposed in the cavity of the holder.

Abstract: A DOE module including a transparent substrate, a first electrode, a second electrode, a first sensing wire, a sensing layer, a DOE layer, and an insulating layer is provided. The first electrode is disposed on the transparent substrate, and the second electrode is disposed on the transparent substrate. The first sensing wire is distributed on the transparent substrate and electrically connected to the first electrode. The sensing layer is distributed on the transparent substrate and electrically connected to the second electrode. The first sensing wire is insulated from the sensing layer to form a capacitance between the first sensing wire and the sensing layer. The DOE layer is disposed on the transparent substrate. The insulating layer covers the first sensing wire and the sensing layer. The insulating layer has a first opening and a second opening respectively exposing the first electrode and the second electrode.

Abstract: The present invention provides an electronic device, wherein the electronic device includes a projector and a controller. The projector includes a laser module and a lens module with a cover glass, wherein a laser beam generated from the laser module passes through the lens module to generate a projected image. The controller is coupled to the projector, and is arranged for determining if the cover glass is broken to generate a determination result, and controlling a power of the laser module according to the determination result.

Abstract: The present invention provides an electronic device, wherein the electronic device includes a projector and a controller. The projector includes a laser module and a lens module with a cover glass, wherein a laser beam generated from the laser module passes through the lens module to generate a projected image. The controller is coupled to the projector, and is arranged for determining if the cover glass is broken to generate a determination result, and controlling a power of the laser module according to the determination result.

Abstract: A capacitor array structure which includes N capacitor units is provided. Each capacitor unit includes a first metal layer, a second metal layer, and a third metal layer to form an upper electrode and a lower electrode. The second metal layer is disposed between the first metal layer and the third metal layer, and includes a second patterned metal portion of the lower electrode and a first patterned metal portion of the upper electrode. disposed above. The second patterned metal portion of the lower electrode has an opening, and a side of the first patterned metal portion of the upper electrode is exposed in the opening, such that the side of the first patterned metal portion of the upper electrode is adjacent to the lower electrode of another capacitor unit.

Abstract: A capacitor array structure which includes N capacitor units is provided. Each capacitor unit includes a first metal layer, a second metal layer, and a third metal layer to form an upper electrode and a lower electrode. The second metal layer is disposed between the first metal layer and the third metal layer, and includes a second patterned metal portion of the lower electrode and a first patterned metal portion of the upper electrode. disposed above. The second patterned metal portion of the lower electrode has an opening, and a side of the first patterned metal portion of the upper electrode is exposed in the opening, such that the side of the first patterned metal portion of the upper electrode is adjacent to the lower electrode of another capacitor unit.

Abstract: A digital video broadcast receiver including a frequency synthesizer, a plurality of frequency dividing-phase shifting circuits, an antenna and a plurality of signal processing modules is provided. The frequency synthesizer synthesizes a first frequency signal. The frequency dividing-phase shifting circuits individually perform a frequency dividing-phase shifting operation on the first frequency signal to generate a plurality of first signals having different frequencies and a plurality of second signals corresponding to the first signals, where each of the first signals is orthogonal to the corresponding second signal. The antenna receives a radio frequency signal. The signal processing modules respectively obtain a plurality of signal components belonging to different sub-bands from the radio frequency signal according to the first signals and the second signals.

Abstract: A digital video broadcast receiver including a frequency synthesizer, a plurality of frequency dividing-phase shifting circuits, an antenna and a plurality of signal processing modules is provided. The frequency synthesizer synthesizes a first frequency signal. The frequency dividing-phase shifting circuits individually perform a frequency dividing-phase shifting operation on the first frequency signal to generate a plurality of first signals having different frequencies and a plurality of second signals corresponding to the first signals, where each of the first signals is orthogonal to the corresponding second signal. The antenna receives a radio frequency signal. The signal processing modules respectively obtain a plurality of signal components belonging to different sub-bands from the radio frequency signal according to the first signals and the second signals.