Patents by Inventor Chih-Yu Jen
Chih-Yu Jen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230335374Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.Type: ApplicationFiled: July 27, 2021Publication date: October 19, 2023Applicant: ASML Netherlands B.V.Inventors: Benoit Herve GAURY, Jun JIANG, Bruno LA FONTAINE, Shakeeb Bin HASAN, Kenichi KANAI, Jasper Frans Mathijs VAN RENS, Cyrus Emil TABERY, Long MA, Oliver Desmond PATTERSON, Jian ZHANG, Chih-Yu JEN, Yixiang WANG
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Publication number: 20230298851Abstract: A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sample. The pixelized electron detector includes multiple pixels arranged in a grid pattern. The multiple pixels may be configured to generate multiple detection signals, wherein each detection signal corresponds to the signal electrons received by a corresponding pixel of the pixelized electron detector. The apparatus further includes a controller includes circuitry configured to determine a topographical characteristic of a structure within the sample based on the detection signals generated by the multiple pixels, and identifying a defect within the sample based on the topographical characteristic of the structure of the sample.Type: ApplicationFiled: July 26, 2021Publication date: September 21, 2023Applicant: ASML Netherlands B.V.Inventors: Chih-Yu JEN, Chien-Hung CHEN, Long MA, Bruno LA FONTAINE, Datong ZHANG
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Patent number: 11651935Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.Type: GrantFiled: July 1, 2021Date of Patent: May 16, 2023Assignee: ASML Netherlands B.V.Inventors: Chih-Yu Jen, Long Ma, Yongjun Wang, Jun Jiang
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Publication number: 20220270849Abstract: A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.Type: ApplicationFiled: August 26, 2020Publication date: August 25, 2022Applicant: ASML Netherlands B.V.Inventors: Jun JIANG, Chih-Yu JEN, Ning YE, Jian ZHANG
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Publication number: 20220005666Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.Type: ApplicationFiled: July 1, 2021Publication date: January 6, 2022Inventors: Chih-Yu JEN, Long Ma, Yongjun Wang, Jun Jiang
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Patent number: 11175248Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.Type: GrantFiled: September 18, 2019Date of Patent: November 16, 2021Assignee: ASML Netherlands B.V.Inventors: Long Ma, Chih-Yu Jen, Zhonghua Dong, Peilei Zhang, Wei Fang, Chuan Li
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Patent number: 11056311Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.Type: GrantFiled: August 27, 2019Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Chih-Yu Jen, Long Ma, Yongjun Wang, Jun Jiang
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Publication number: 20200088659Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.Type: ApplicationFiled: September 18, 2019Publication date: March 19, 2020Inventors: Long MA, Chih-Yu JEN, Zhonghua DONG, Peilei ZHANG, Wei FANG, Chuan LI
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Publication number: 20200075287Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.Type: ApplicationFiled: August 27, 2019Publication date: March 5, 2020Inventors: Chih-Yu Jen, Long Ma, Yongjun Wang, Jun Jiang
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Patent number: 9599555Abstract: A system and method for determining a doping profile of a sample includes a generator and at least one detector of terahertz light of multiple frequencies, configured to operate in a transmission and/or reflection mode; a materials refractive index library; and an inverse algorithm that can match simulated spectra using a trial doping profile and the materials library with the measured spectra from a sample, and map out or measure an activated doping profile into, or a free carrier distribution into, the interior of the sample.Type: GrantFiled: November 13, 2015Date of Patent: March 21, 2017Assignee: Rochester Institute of TechnologyInventors: Christiaan Richter, Chih-Yu Jen
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Publication number: 20160139044Abstract: A system and method for determining a doping profile of a sample includes a generator and at least one detector of terahertz light of multiple frequencies, configured to operate in a transmission and/or reflection mode; a materials refractive index library; and an inverse algorithm that can match simulated spectra using a trial doping profile and the materials library with the measured spectra from a sample, and map out or measure an activated doping profile into, or a free carrier distribution into, the interior of the sample.Type: ApplicationFiled: November 13, 2015Publication date: May 19, 2016Applicant: Rochester Institute of TechnologyInventors: Christiaan Richter, Chih-Yu Jen
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Publication number: 20130247976Abstract: A solar cell includes: a substrate having a front surface and a back surface; a dielectric layer disposed on the back surface and having at least two through holes to expose the back surface; at least two first electrode layers formed on the dielectric layer and respectively filling in the through holes to contact the substrate; at least one second electrode layer entirely formed on the dielectric layer and disposed between the first electrode layers; at least one space disposed on the dielectric layer; and at least one third electrode layer filled in the space to interconnect the second electrode layer and one of the first electrode layers.Type: ApplicationFiled: March 22, 2013Publication date: September 26, 2013Applicant: MOTECH INDUSTRIES INC.Inventors: Awankana Li, Chia-Mei Lin, Chih-Yu Jen, Ting Fang