Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.

Abstract: In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1?a?2, b?1, c?1, and b+c?4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an epitaxial layer arranged on a semiconductor body. A trap-rich layer is arranged on the epitaxial layer, a dielectric layer is arranged on the trap-rich layer, and an active semiconductor layer is arranged on the dielectric layer. A semiconductor material is arranged on the epitaxial layer and laterally beside the active semiconductor layer. The epitaxial layer continuously extends from directly below the trap-rich layer to directly below the semiconductor material.

Abstract: In one example, an electronic device may include a display screen defining a plurality of display regions. Further, the electronic device may include a camera to capture an image of an operator of the electronic device. Furthermore, the electronic device may include a controller operatively coupled to the camera and the display screen. The controller may detect an orientation of the operator's face with respect to the display screen using the captured image. Further, the controller may determine a first display region of the plurality of display regions corresponding to the detected orientation of the operators face. Furthermore, the controller may activate the first display region to position a cursor of a pointing device within the first display region.

Abstract: A centrifugal fan module is provided. The centrifugal fan module includes a housing, a blade unit, a heat sink and a vapor chamber. The housing includes a bottom cover, a sidewall, a top cover and an outlet structure, wherein the bottom cover is connected to the bottom of the sidewall, the top cover is connected to the top of the sidewall, and the outlet structure is connected to the top cover and the sidewall. The blade unit is disposed in the housing, wherein the blade unit is located between the bottom cover and the top cover. The heat sink is disposed on the vapor chamber, the heat sink is located between the vapor chamber and the top cover, and the heat sink is located between the outlet structure and the blade unit.

Abstract: Embodiments of this application provide an electronic device, including a first decoupling member, a first radiator, a second radiator, a first feed unit, a second feed unit, and a rear cover. A first gap is formed between the first radiator and the second radiator. The first radiator includes a first feed point. The second radiator includes a second feed point. The first decoupling member is indirectly coupled to the first radiator and the second radiator, and the first decoupling member is disposed on a surface of the rear cover.

Abstract: An electronic device includes a radiator, a first feed circuit, and a second feed circuit. The radiator includes a first branch. The first feed circuit feeds the radiator at a first end of the first branch, and the second feed circuit feeds the radiator at a first position in the first branch. The first position is in an area with a largest current in the first branch when the first feed circuit performs feeding and the second feed circuit does not perform feeding.

Abstract: A noise monitoring apparatus includes a row selection circuit, a direct current (DC) cancellation circuit and an amplifier circuit. The row selection circuit selects a row of a DUT array to be a selected row during a readout period, wherein the selected row comprises a plurality of selected DUTs. The DC cancellation circuit is coupled to unselected DUTs of the DUT array during the readout period, generates a DC current signal based on bias current signals from a group of unselected DUTs and subtract the DC current signal from a first noise signal of the selected DUT to generate a second noise signal. The amplifier circuit is coupled to the plurality of selected DUTs of the selected row during the readout period, and amplifies the second noise signal from each of the selected DUTs to generate an output signal.

Abstract: A double-sided flexible circuit board includes a flexible substrate, through circuit lines, first circuit lines and second circuit lines. The first circuit lines are formed on a top surface of the flexible substrate and each includes a first segment, a bent segment and a second segment. One end of the first segment is connected to a first connection end of one of the through circuit lines. Both ends of the bent segment are connected to the other end of the first segment and one end of the second segment, respectively. A second distance between the adjacent second segments is greater than a first distance between the adjacent first segments. The second circuit lines are formed on a bottom surface of the flexible substrate and each is connected to a second connection end of one of the through circuit lines.

Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.