Abstract: An environmentally friendly water-based printing ink manufacturing method includes the steps of: placing a color paste into a barrel for stirring at a high speed, placing an anti-scratch hardener and a slow-drying agent in batches and continuing stirring, placing a mixture of anti-scratch hardener and slow-drying agent in a specific ratio, placing a scratch-resistant and chemical-resistant resin and a wear-resistant wetting resin, placing a defoaming agent and continuing stirring for a first predetermined time, placing a thickener and continuing stirring for a second predetermined time, placing a wetting agent and continuing stirring for a third predetermined time, placing a film-forming agent and continuing stirring for a fourth predetermined time, measuring the pH value of the printing ink and adjusting the printing ink to make the printing ink weakly alkaline, filtering the printing ink and packing the printing ink into barrels to complete the manufacturing process.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Abstract: A memory device includes a stack structure, a first stop layer, a dielectric layer, at least one separation wall and a conductive plug. The stacked structure is located over a substrate. The stacked structure has an opening exposing a stepped structure of the stacked structure. The first stop layer covers the stepped structure and at least at least one portion of sidewalls of the opening. The dielectric layer fills the opening and covers the first stop layer. The separation wall extends through the dielectric layer and the first stop layer in the opening. The conductive plug extends through the dielectric layer and the first stop layer, and is electrically connected to the stepped structure. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: Provided is a capacitor structure for a three-dimensional AND flash memory device. The capacitor includes a substrate having a capacitor array region and a capacitor staircase region, a circuit under array (CuA) structure disposed on the substrate, a bottom conductive layer disposed on the CuA structure, a stacked structure disposed on the bottom conductive layer, and pillar structures. The stacked structure includes dielectric layers and conductive layers alternately stacked. The conductive layers in the capacitor staircase region are arranged in a staircase form. The pillar structures are arranged in an array in the capacitor array region and penetrate through the stacked structure and the bottom conductive layer. A part of the conductive layers is 10 electrically connected to a first common voltage source, and the rest of the conductive layers and the bottom conductive layer are electrically connected to a second common voltage source.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a first movable portion used for connecting an optical element, a fixed portion, a first driving assembly used for driving the first movable portion to rotate relative to the fixed portion, and a guiding assembly having a first intermediate element. The first movable portion is movable relative to the fixed portion. The guiding assembly is used for applying a first stabilized force to the first movable portion for making the first intermediate element be in contact with the first movable portion or the fixed portion. The first movable portion is rotatable relative to the fixed portion.

Abstract: A semiconductor device package includes a substrate and an antenna module. The substrate has a first surface and a second surface opposite to the first surface. The antenna module is disposed on the first surface of the substrate with a gap. The antenna module has a support and an antenna layer. The support has a first surface facing away from the substrate and a second surface facing the substrate. The antenna layer is disposed on the first surface of the support. The antenna layer has a first antenna pattern and a first dielectric layer.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A cyclic power generation and storage system with dynamic battery switching capability is provided, comprising: a power supply modules, a driving module, a transmission module, a plurality of power generation modules, a control module, and a plurality of power storage modules. The present invention can dynamically switch in battery packs to provide a stable power to an electrical device, as well as, switch in a battery or battery pack for recharging with the power generated by the power generation modules. The power storage module having a power management unit, together with the control module, uses the detection result from the power detection unit of the power storage module to dynamically adjust the power generation, distribution, storage, and usage to improve the overall efficiency of the present invention.

Abstract: A communication device for detecting an object includes a power module, an antenna array, a first sensor pad, a second sensor pad, and a control unit. The antenna array is excited by the power module, and is configured to provide a first beam group and a second beam group. The first sensor pad is disposed adjacent to the first side of the antenna array. A first capacitance is formed between the first sensor pad and the object. The second sensor pad is disposed adjacent to the second side of the antenna array. A second capacitance is formed between the second sensor pad and the object. The control unit controls the power module according to the first capacitance and the second capacitance, so as to selectively apply at least one power backoff operation to the first beam group and/or the second beam group.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a first source/drain feature and a second source/drain feature, a plurality of semiconductor layers vertically stacked and disposed between the first and second source/drain features, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, and an interfacial layer (IL) disposed between the gate electrode layer and one of the plurality of the semiconductor layers, wherein a topmost semiconductor layer of the plurality of the semiconductor layers has a first length, and the IL has a second length greater than the first length.

Abstract: A joint level dielectric material layer is formed over a first alternating stack of first insulating layers and first spacer material layers. A first memory opening is formed with a tapered sidewall of the joint level dielectric material layer. A second alternating stack of second insulating layers and second spacer material layers is formed over the joint level dielectric material layer. An inter-tier memory opening is formed, which includes a volume of an second memory opening that extends through the second alternating stack and a volume of the first memory opening. A memory film and a semiconductor channel are formed in the inter-tier memory opening with respective tapered portions overlying the tapered sidewall of the joint level dielectric material layer.

Abstract: A power supply device includes: a plurality of resonant coils each having a resonant portion and a power transmission portion electrically connected to the resonant portion, the resonance portion receives electromagnetic waves of a different frequency, and converts electromagnetic waves of different frequencies into electric energy; and a power converting unit electrically connected to the power transmission portion to receive the electrical energy from the power transmission portion, and storing the electrical energy. A user uses the resonant coil to generate power by the resonance of the resonant coil with the electromagnetic waves in natural environment, and the power is stored in the power converting unit. The electric power converting unit does not need to store electricity through the power source, and only needs to use the electromagnetic waves in the environment to generate electrical energy, which facilitates the user to store electricity in the power converting unit.

Abstract: A joint level dielectric material layer is formed over a first alternating stack of first insulating layers and first spacer material layers. A first memory opening is formed with a tapered sidewall of the joint level dielectric material layer. A second alternating stack of second insulating layers and second spacer material layers is formed over the joint level dielectric material layer. An inter-tier memory opening is formed, which includes a volume of an second memory opening that extends through the second alternating stack and a volume of the first memory opening. A memory film and a semiconductor channel are formed in the inter-tier memory opening with respective tapered portions overlying the tapered sidewall of the joint level dielectric material layer.

Abstract: A power supply device includes: a plurality of resonant coils each having a resonant portion and a power transmission portion electrically connected to the resonant portion, the resonance portion receives electromagnetic waves of a different frequency, and converts electromagnetic waves of different frequencies into electric energy; and a power converting unit electrically connected to the power transmission portion to receive the electrical energy from the power transmission portion, and storing the electrical energy. A user uses the resonant coil to generate power by the resonance of the resonant coil with the electromagnetic waves in natural environment, and the power is stored in the power converting unit. The electric power converting unit does not need to store electricity through the power source, and only needs to use the electromagnetic waves in the environment to generate electrical energy, which facilitates the user to store electricity in the power converting unit.

Abstract: A battery electric vehicle provided in the present invention comprises a vehicle body having wheels, an electric motor, an electric generator, and an electricity management device. The electric motor and the electric generator are connected to different wheels of the vehicle body respectively. The electric generator generates electricity by converting the rotational kinetic energy of the wheel into electrical energy. The electricity management device includes a management and controlling member, a detecting member, and a plurality of battery packs. The management and controlling member controls at least one of the battery packs to provide electricity to the electric motor by electrically connecting the electric motor, while the management and controlling member controls at least one battery pack of other battery packs to be charged by receiving the electricity generated by means of electrically connecting to the electric generator.

Abstract: A joint level dielectric material layer is formed over a first alternating stack of first insulating layers and first spacer material layers. A first memory opening is formed with a tapered sidewall of the joint level dielectric material layer. A second alternating stack of second insulating layers and second spacer material layers is formed over the joint level dielectric material layer. An inter-tier memory opening is formed, which includes a volume of an second memory opening that extends through the second alternating stack and a volume of the first memory opening. A memory film and a semiconductor channel are formed in the inter-tier memory opening with respective tapered portions overlying the tapered sidewall of the joint level dielectric material layer.

Abstract: A battery electric vehicle provided in the present invention comprises a vehicle body having wheels, an electric motor, an electric generator, and an electricity management device. The electric motor and the electric generator are connected to different wheels of the vehicle body respectively. The electric generator generates electricity by converting the rotational kinetic energy of the wheel into electrical energy. The electricity management device includes a management and controlling member, a detecting member, and a plurality of battery packs. The management and controlling member controls at least one of the battery packs to provide electricity to the electric motor by electrically connecting the electric motor, while the management and controlling member controls at least one battery pack of other battery packs to be charged by receiving the electricity generated by means of electrically connecting to the electric generator.

Abstract: A road automatically dividing apparatus comprises a ground-embedded base, a telescopic tube set, an illuminating device, and a driving device. The ground-embedded base includes an accommodating space and an upper opening. The telescopic tube set, disposed in the accommodating space, includes a plurality of translucent column tubes which are connected telescopically and are relatively slidable in such a manner that each translucent column tube is converted between an expanding position and a collapsing position. The expanding position allows each translucent column tube expand from the neighboring one by sliding relatively to each other. The illuminating device is for emitting light penetrating the telescopic tube set. The driving device is configured to drive the telescopic tube set such that the telescopic tube set expands and collapses between the expanding position and the collapsing position.