Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.

Abstract: A driving circuit, flexible display device and flexible splicing display apparatus thereof are described. The driving circuit comprises a driving chip, a plurality of data signal wires and a plurality of scan signal wires. The data signal wires of the flexible display device and the data lines are connected correspondingly within the display region of the flexible display device, and the scan signal wires and the scan lines are connected correspondingly in one side of the driving chip of the flexible display device. The present invention utilizes the arrangement of connection pads of the signal wires to improve the display quality of the flexible display device.

Abstract: A driving circuit, flexible display device and flexible splicing display apparatus thereof are described. The driving circuit comprises a driving chip, a plurality of data signal wires and a plurality of scan signal wires. The data signal wires of the flexible display device and the data lines are connected correspondingly within the display region of the flexible display device, and the scan signal wires and the scan lines are connected correspondingly in one side of the driving chip of the flexible display device. The present invention utilizes the arrangement of connection pads of the signal wires to improve the display quality of the flexible display device.

Abstract: A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.

Abstract: A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.

Abstract: The present invention discloses a thin film transistor, comprising an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode formed on a substrate. The active layer is above the substrate. The gate insulating layer, the source electrode, and the drain electrode are above the active layer. The gate electrode is above the gate insulating layer. Wherein, the thin film transistor further comprises a shielding layer between the substrate and the active layer, the shielding layer is used to absorb external light. The thin film transistor according to the present invention not only has strong stability, but also has high output efficiency. Moreover, the thin film transistor can follow the existing process, which facilitates mass production. The present invention further discloses a manufacturing method of the thin film transistor and a thin film transistor array substrate using the thin film transistor.

Abstract: A driving circuit, flexible display device and flexible splicing display apparatus thereof are described. The driving circuit comprises a driving chip, a plurality of data signal wires and a plurality of scan signal wires. The data signal wires of the flexible display device and the data lines are connected correspondingly within the display region of the flexible display device, and the scan signal wires and the scan lines are connected correspondingly in one side of the driving chip of the flexible display device. The present invention utilizes the arrangement of connection pads of the signal wires to improve the display quality of the flexible display device.

Abstract: A flexible splicing display apparatus is described. The flexible splicing display apparatus includes a plurality of flexible display devices. The display region is disposed in a central portion of the flexible display device, and the connection region is disposed in the two display regions. The gamma values and colorimetric values of the connection regions between two display regions is ensured based on the gamma and colorimetric values of the two display regions respectively. The flexible splicing display apparatus of the present invention solves the problems of lower brightness and deviation of colors which occurs in the overlapped regions of the OLED flexible display devices.

Abstract: The present invention discloses a thin film transistor, comprising an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode formed on a substrate. The active layer is above the substrate. The gate insulating layer, the source electrode, and the drain electrode are above the active layer. The gate electrode is above the gate insulating layer. Wherein, the thin film transistor further comprises a shielding layer between the substrate and the active layer, the shielding layer is used to absorb external light. The thin film transistor according to the present invention not only has strong stability, but also has high output efficiency. Moreover, the thin film transistor can follow the existing process, which facilitates mass production. The present invention further discloses a manufacturing method of the thin film transistor and a thin film transistor array substrate using the thin film transistor.