Patents by Inventor Chih-yu Su
Chih-yu Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978810Abstract: Various embodiments of the present disclosure are directed towards a method for forming a varactor comprising a reduced surface field (RESURF) region. The method includes forming a drift region having a first doping type within a substrate. A RESURF region having a second doping type is formed within the substrate such that the RESURF region is below the drift region. A gate structure is formed on the substrate. A pair of contact regions is formed within the substrate on opposing sides of the gate structure. The contact regions respectively abut the drift region and have the first doping type, and wherein the first doping type is opposite the second doping type.Type: GrantFiled: May 19, 2021Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Liang-Yu Su, Chih-Wen Yao, Hsiao-Chin Tuan, Ming-Ta Lei
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Patent number: 11942530Abstract: The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.Type: GrantFiled: December 6, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Yuan Chen, Pei-Yu Wang, Huan-Chieh Su, Chih-Hao Wang
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Publication number: 20240069299Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Inventors: Chao-Chang HU, Kuen-Wang TSAI, Liang-Ting HO, Chao-Hsi WANG, Chih-Wei WENG, He-Ling CHANG, Che-Wei CHANG, Sheng-Zong CHEN, Ko-Lun CHAO, Min-Hsiu TSAI, Shu-Shan CHEN, Jungsuck RYOO, Mao-Kuo HSU, Guan-Yu SU
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Patent number: 9634148Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.Type: GrantFiled: January 21, 2015Date of Patent: April 25, 2017Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Longqiang Shi, Zhiyuan Zeng, Wenhui Li, Chih-Yu Su, Xiaowen Lv
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Patent number: 9620647Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.Type: GrantFiled: January 21, 2015Date of Patent: April 11, 2017Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventors: Longqiang Shi, Zhiyuan Zeng, Wenhui Li, Chih-Yu Su, Xiaowen Lv
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Publication number: 20170076682Abstract: A driving circuit, flexible display device and flexible splicing display apparatus thereof are described. The driving circuit comprises a driving chip, a plurality of data signal wires and a plurality of scan signal wires. The data signal wires of the flexible display device and the data lines are connected correspondingly within the display region of the flexible display device, and the scan signal wires and the scan lines are connected correspondingly in one side of the driving chip of the flexible display device. The present invention utilizes the arrangement of connection pads of the signal wires to improve the display quality of the flexible display device.Type: ApplicationFiled: November 4, 2016Publication date: March 16, 2017Inventors: Xiaowen LV, Chih-Yu SU, Chih Hao WU
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Patent number: 9576545Abstract: A driving circuit, flexible display device and flexible splicing display apparatus thereof are described. The driving circuit comprises a driving chip, a plurality of data signal wires and a plurality of scan signal wires. The data signal wires of the flexible display device and the data lines are connected correspondingly within the display region of the flexible display device, and the scan signal wires and the scan lines are connected correspondingly in one side of the driving chip of the flexible display device. The present invention utilizes the arrangement of connection pads of the signal wires to improve the display quality of the flexible display device.Type: GrantFiled: June 19, 2014Date of Patent: February 21, 2017Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Xiaowen Lv, Chih-Yu Su, Chih Hao Wu
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Patent number: 9570482Abstract: A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.Type: GrantFiled: November 28, 2014Date of Patent: February 14, 2017Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Xiaowen Lv, Wenhui Li, Longqiang Shi, Chih-yu Su, Chih-yuan Tseng
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Publication number: 20160351601Abstract: A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.Type: ApplicationFiled: November 28, 2014Publication date: December 1, 2016Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventors: Xiaowen LV, Wenhui LI, Longqiang SHI, Chih-yu SU, Chih-yuan TSENG
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Publication number: 20160343873Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.Type: ApplicationFiled: January 21, 2015Publication date: November 24, 2016Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventors: Longqiang SHI, Zhiyuan ZENG, Wenhui LI, CHIH-YU SU, Xiaowen LV
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Publication number: 20160343877Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.Type: ApplicationFiled: January 21, 2015Publication date: November 24, 2016Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventors: Longqiang SHI, Zhiyuan ZENG, Wenhui LI, CHIH-YU SU, Xiaowen LV
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Patent number: 9397221Abstract: The present invention discloses a thin film transistor, comprising an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode formed on a substrate. The active layer is above the substrate. The gate insulating layer, the source electrode, and the drain electrode are above the active layer. The gate electrode is above the gate insulating layer. Wherein, the thin film transistor further comprises a shielding layer between the substrate and the active layer, the shielding layer is used to absorb external light. The thin film transistor according to the present invention not only has strong stability, but also has high output efficiency. Moreover, the thin film transistor can follow the existing process, which facilitates mass production. The present invention further discloses a manufacturing method of the thin film transistor and a thin film transistor array substrate using the thin film transistor.Type: GrantFiled: December 5, 2013Date of Patent: July 19, 2016Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventor: Chih-yu Su
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Publication number: 20150364070Abstract: A driving circuit, flexible display device and flexible splicing display apparatus thereof are described. The driving circuit comprises a driving chip, a plurality of data signal wires and a plurality of scan signal wires. The data signal wires of the flexible display device and the data lines are connected correspondingly within the display region of the flexible display device, and the scan signal wires and the scan lines are connected correspondingly in one side of the driving chip of the flexible display device. The present invention utilizes the arrangement of connection pads of the signal wires to improve the display quality of the flexible display device.Type: ApplicationFiled: June 19, 2014Publication date: December 17, 2015Inventors: Xiaowen LV, Chih-Yu SU, Chih-Hao WU
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Publication number: 20150364096Abstract: A flexible splicing display apparatus is described. The flexible splicing display apparatus includes a plurality of flexible display devices. The display region is disposed in a central portion of the flexible display device, and the connection region is disposed in the two display regions. The gamma values and colorimetric values of the connection regions between two display regions is ensured based on the gamma and colorimetric values of the two display regions respectively. The flexible splicing display apparatus of the present invention solves the problems of lower brightness and deviation of colors which occurs in the overlapped regions of the OLED flexible display devices.Type: ApplicationFiled: June 19, 2014Publication date: December 17, 2015Inventors: Xiaowen LV, Chih-Yu SU
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Publication number: 20150249161Abstract: The present invention discloses a thin film transistor, comprising an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode formed on a substrate. The active layer is above the substrate. The gate insulating layer, the source electrode, and the drain electrode are above the active layer. The gate electrode is above the gate insulating layer. Wherein, the thin film transistor further comprises a shielding layer between the substrate and the active layer, the shielding layer is used to absorb external light. The thin film transistor according to the present invention not only has strong stability, but also has high output efficiency. Moreover, the thin film transistor can follow the existing process, which facilitates mass production. The present invention further discloses a manufacturing method of the thin film transistor and a thin film transistor array substrate using the thin film transistor.Type: ApplicationFiled: December 5, 2013Publication date: September 3, 2015Inventor: Chih-yu Su