Patents by Inventor Chih-Yuan CHAO

Chih-Yuan CHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250040213
    Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.
    Type: Application
    Filed: July 27, 2023
    Publication date: January 30, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Yi-Hsiang Chao, Peng-Hao Hsu, Yu-Shiuan Wang, Chi-Yuan Chen, Yu-Hsiang Liao, Chun-Hsien Huang, Hung-Chang Hsu, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Patent number: 11504393
    Abstract: The invention is to provide a hydrogen sulfide sustained releasing dressing and a manufacturing method thereof. The hydrogen sulfide sustained releasing dressing includes a hydrocolloid, a surfactant and sodium hydro sulfide. The manufacturing method includes (a) heating and stirring a hydrocolloid material; (b) adding a surfactant and sodium hydrosulfide into the hydrocolloid material; and (c) injecting the hydrocolloid material containing the surfactant and the sodium hydrosulfide into a mold for thermoforming a hydrogen sulfide sustained releasing dressing.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: November 22, 2022
    Assignee: BenQ Materials Corporation
    Inventors: Lie-Sian Yap, Chih-Yuan Chao, Yu-Pu Wang
  • Patent number: 11485953
    Abstract: The present disclosure provides for a cell stabilizing medium which comprises gelatin. The cell stabilizing medium help maintain cell viability, e.g., after thawing of a biological material post-cryopreservation.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: November 1, 2022
    Assignee: TRANSWELL BIOTECH CO., LTD.
    Inventors: Ya-Hsuan Chang, Cheng-Yi Lin, Chih-Yuan Chao
  • Publication number: 20220272840
    Abstract: A double-sided and multilayer flexible printed circuit (FPC) substrate contains: a body, multiple tilted vias passing through the body, a sputtering layer, multiple conductive portions, and multiple copper circuit layers. The sputtering layer is adhered on the body and the multiple tilted vias. A respective conductive portion is formed in a respective titled via and is connected with the sputtering layer. The multiple copper circuit layers are located on a top and a bottom of the body and are connected with the sputtering layer, and the multiple copper circuit layers are connected via the multiple conductive portions.
    Type: Application
    Filed: February 22, 2021
    Publication date: August 25, 2022
    Inventors: Sui-Ho Tsai, Cheng-Neng Chen, Yun-Nan Wang, Chih-Yuan Chao, Hsueh-Tsung Lu
  • Patent number: 11406018
    Abstract: A double-sided and multilayer flexible printed circuit (FPC) substrate contains: a body, multiple tilted vias passing through the body, a sputtering layer, multiple conductive portions, and multiple copper circuit layers. The sputtering layer is adhered on the body and the multiple tilted vias. A respective conductive portion is formed in a respective titled via and is connected with the sputtering layer. The multiple copper circuit layers are located on a top and a bottom of the body and are connected with the sputtering layer, and the multiple copper circuit layers are connected via the multiple conductive portions.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: August 2, 2022
    Assignee: APLUS SEMICONDUCTOR TECHNOLOGIES CO., LTD.
    Inventors: Sui-Ho Tsai, Cheng-Neng Chen, Yun-Nan Wang, Chih-Yuan Chao, Hsueh-Tsung Lu
  • Publication number: 20200237811
    Abstract: The invention is to provide a hydrogen sulfide sustained releasing dressing and a manufacturing method thereof. The hydrogen sulfide sustained releasing dressing includes a hydrocolloid, a surfactant and sodium hydro sulfide. The manufacturing method includes (a) heating and stirring a hydrocolloid material; (b) adding a surfactant and sodium hydrosulfide into the hydrocolloid material; and (c) injecting the hydrocolloid material containing the surfactant and the sodium hydrosulfide into a mold for thermoforming a hydrogen sulfide sustained releasing dressing.
    Type: Application
    Filed: December 5, 2019
    Publication date: July 30, 2020
    Inventors: Lie-Sian YAP, Chih-Yuan CHAO, Yu-Pu WANG
  • Publication number: 20180094235
    Abstract: The present disclosure provides for a cell stabilizing medium which comprises gelatin. The cell stabilizing medium help maintain cell viability, e.g., after thawing of a biological material post-cryopreservation.
    Type: Application
    Filed: October 3, 2017
    Publication date: April 5, 2018
    Inventors: Ya-Hsuan CHANG, Cheng-Yi LIN, Chih-Yuan CHAO