Abstract: A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.

Abstract: An input/output circuit (I/O circuit) includes the following elements. An input/output pad (I/O pad) has a plurality of operation mode, including an output mode, a normal input mode and a tolerance mode of an input mode. A first control circuit provides a first control signal in response to a pad voltage of the I/O pad and a supply voltage. A first P-type transistor has a first body region to receive a first control signal. A second P-type transistor has a second body region to receive the first control signal. In the input mode, when the pad voltage is lower than or equal to the supply voltage, the I/O pad operates in the normal input mode, and, when the pad voltage is higher than the supply voltage, the I/O pad operates in the tolerance mode, and voltage of the first control signal is equal to pad voltage.

Abstract: An electrostatic discharge (ESD) circuit is used to protect an internal circuit. The ESD circuit includes: an ESD clamp, having a first terminal connected to a power and a second terminal connected to a ground voltage; and a first switch, connected between an ESD terminal of the ESD clamp and the internal circuit. A gate of the first switch is controlled by a state signal in the ESD clamp to turn off the first switch when an ESD event occurs on the first terminal of the ESD clamp and turn on the first switch when the ESD event does not occur.

Abstract: An electrostatic discharge (ESD) circuit is used to protect an internal circuit. The ESD circuit includes: an ESD clamp, having a first terminal connected to a power and a second terminal connected to a ground voltage; and a first switch, connected between an ESD terminal of the ESD clamp and the internal circuit. A gate of the first switch is controlled by a state signal in the ESD clamp to turn off the first switch when an ESD event occurs on the first terminal of the ESD clamp and turn on the first switch when the ESD event does not occur.

Abstract: A modular valance structure includes a fabric valance body, a zipper and a fabric cover. The fabric valance body includes a plurality of adjacent spaced apart openings, and the zipper is connected to the fabric valance body. Therefore, an easily detachable and attachable structure for cleaning purposes without removing the entire assembly is achieved. Also, it is to permit the user to easily change the curtain to change colors, or design for aesthetic purposes.