Abstract: A fabricating method of a semiconductor stacking layer includes following steps. First, an amorphous silicon (a-Si) layer is formed on a substrate. Surface treatment is then performed on a surface of the a-Si layer. After that, a doped microcrystalline silicon (?c-Si) layer is formed on the treated surface of the a-Si layer, wherein interface defects existing between the a-Si layer and the doped ?c-Si layer occupy an area in a cross-sectional region having a width of 1.5 micrometers and a thickness of 40 nanometers, and a ratio of the occupied area in the cross-sectional region is equal to or less than 10%. The method of fabricating the semiconductor stacking layer can be applied to a fabrication process of a semiconductor device to effectively reduce the interface defects of the semiconductor stacking layer.

Abstract: A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.

Abstract: Manufacturing methods of using a metal imprint technique for growing carbon nanotubes on selective areas and the structures formed thereof are provided. One of the manufacturing methods includes steps of forming a first substrate with tapered structures applied with a metal catalyst, imprinting a second substrate on the first substrate for being a growth substrate, and growing carbon nanotubes on the growth substrate. The other manufacturing method includes steps of forming a first substrate with tapered structures, imprinting the first substrate on a second substrate applied with a metal catalyst for forming a second growth substrate, and growing carbon nanotubes on the second grown substrate. And, the formed structures of the present invention include a substrate, plural carbon nanotubes, and plural imprinted vestiges.

Abstract: A manufacturing method of a semiconductor device, includes the following steps: providing a substrate with an insulated surface; forming an amorphous silicon layer on the insulated surface; imposing a catalytic metal element on the amorphous silicon layer; heating and catalyzing the amorphous silicon layer to form a poly-silicon layer; forming a diffusion layer and a gettering material layer on the poly-silicon layer in order; proceeding an annealing process on the gettering material layer and the poly-silicon layer to move the residual metal catalyst element from the poly-silicon layer toward the gettering material layer due to the concentration gradient; and removing the diffusion layer and the gettering material layer.

Abstract: A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.

Abstract: A mini secure digital (SD) card connector includes an insulation body, a movable cover and a plurality of insertion terminals. The insulation body has a plurality of channels to receive insertion terminals and at least one jam bulge arranged in the front end of the insulation body to wedge with front side of a mini SD card. The movable cover covers on the top of the insulation body. The movable cover is formed by a pressure plate, two side plates and a folded panel formed on the middle of the pressure plate. When a mini SD card is inserted the mini SD card connector, the mini SD card connector provides at least one jam bulge to lock the front side of the mini SD card, so that the signal contact portion of the mini SD card is locked correctly and firmly in the mini SD card connector.