Patents by Inventor Chih-Yuan Kung

Chih-Yuan Kung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11916060
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Fu Hsu, Ta-Yuan Kung, Chen-Liang Chu, Chih-Chung Tsai
  • Patent number: 11444615
    Abstract: A termination circuit, including a termination resistor, a first switch circuit, a second switch circuit, and a control circuit, is provided. A first end of the termination resistor is coupled to a signal pad. A first end of the first switch circuit is coupled to a second end of the termination resistor. A first end of the second switch circuit is coupled to a second end of the first switch circuit. A second end of the second switch circuit is coupled to a reference voltage line. During a period when the second switch circuit is turned on, the control circuit turns on the first switch circuit with a bias voltage. During a period when the second switch circuit is turned off, the control circuit turns off the first switch circuit with a voltage of the first end of the first switch circuit.
    Type: Grant
    Filed: February 1, 2021
    Date of Patent: September 13, 2022
    Assignee: Novatek Microelectronics Corp.
    Inventors: Liang-Ting Kuo, Chih-Yuan Kung, Kuan-Ting Lin, Chu-Wei Hsia
  • Publication number: 20220247402
    Abstract: A termination circuit, including a termination resistor, a first switch circuit, a second switch circuit, and a control circuit, is provided. A first end of the termination resistor is coupled to a signal pad. A first end of the first switch circuit is coupled to a second end of the termination resistor. A first end of the second switch circuit is coupled to a second end of the first switch circuit. A second end of the second switch circuit is coupled to a reference voltage line. During a period when the second switch circuit is turned on, the control circuit turns on the first switch circuit with a bias voltage. During a period when the second switch circuit is turned off, the control circuit turns off the first switch circuit with a voltage of the first end of the first switch circuit.
    Type: Application
    Filed: February 1, 2021
    Publication date: August 4, 2022
    Applicant: Novatek Microelectronics Corp.
    Inventors: Liang-Ting Kuo, Chih-Yuan Kung, Kuan-Ting Lin, Chu-Wei Hsia