Abstract: A ferroelectric capacitor is provided in which the surface area of a ferroelectric thin film is expanded to increase the amount of polarization. In the ferroelectric capacitor, hemi-spherical protruding parts 31 are formed with HSG-growth on the surface of a polycrystalline silicon film 30. On the polycrystalline silicon film 30 having the hemi-spherical protruding parts 31 are sequentially laminated an adhesive layer 32, lower electrode 33, ferroelectric film 34, and upper electrode 35. The ferroelectric film 34 is shaped to overlap the shape of hemi-spherical protruding parts 31 of the polycrystalline silicon film 30, and the surface area thereof is expanded.

Abstract: In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film—are sequentially made on an Si substrate. The SBT film may comprise Bix, Sry, Ta2.0 and Oz, where the atomic ratio may be within the range of 0?Sr/Ti?1.0, 0?Ba/Ti?1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O—C2H5)3, Bi(O—iC3H7)3, Bi(O-tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2. 2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(TD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i-OC3H7)4THD.

Abstract: A ferroelectric capacitor is provided in which the surface area of a ferroelectric thin film is expanded to increase the amount of polarization.

Abstract: In a process for manufacturing a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film-are sequentially made on a Si substrate. The SBT film may comprise BixSryTa2.0Oz, where the atomic composition ratio maybe within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is annealed to change its amorphous phase to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O-C2H5)3, Bi(O-iC3H7)3, Bi(O- tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2·2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(THD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i- OC3H7)4THD.

Abstract: In a process for manufacturing a dielectric capacitor using a SBT film as its dielectric film, an IrO2 film 2, Ir film 3, both making up a lower electrode, an amorphous film 4 as a precursor film of the SBT film, and a Pt film 5 as an upper electrode are sequentially made on a Si substrate 5. Then, the Pt film 5, amorphous film 4, Ir film 3 and IrO2 film 2 are patterned into the form of the dielectric capacitor, and the amorphous film 4 is annealed to change the amorphous phase in the amorphous film 4 to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film 6. Therefore, even when the decrease in area of dielectric capacitors progresses, a dielectric capacitor with good characteristics can be realized, and a semiconductor storage device using a dielectric capacitor having good characteristics can be obtained.

Abstract: A method of producing a bismuth layered compound that includes the steps of providing a substrate, dissolving Bi, Sr and Ta containing compounds in an organic solvent to form a solution having a Bi:Sr:Ta volume ratio of 2:1:2, evaporating the solution and depositing the evaporated solution onto the substrate, heating the substrate to form a thin film having a fluorite structure, and heating the thin film in an oxidizing atmosphere to convert the thin film having a fluorite structure to a thin film comprising Bi2SrTa2O9.

Abstract: A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N.sub.2 O, or NO.sub.2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.

Abstract: A semiconductor device manufacturing method and a semiconductor lead frame and its manufacturing method are disclosed. The semiconductor lead frame, in one form, comprises a chip pad section on which a semiconductor chip is mounted and a lead section including inner leads that are wire-bonded to electrodes of the semiconductor chip and outer leads that protrude out from the lead frame after packaging. Further, when the pad section and the lead section are connected together using a folding portion, which has not been folded, then the chip pad section sits apart from the lead section without overlapping. When the folding portion is folded, the ends of the inner leads of the lead section overlap the chip pad section and are located around a semiconductor chip mounting position of the chip pad section. Other forms of the semiconductor lead frame and various forms of the above-mentioned manufacturing methods are also disclosed.

Abstract: Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.

Abstract: A process is disclosed for making a bismuth layered compound, such as Bi.sub.2 SrTa.sub.2 O.sub.9, by forming mixture of Bi.sub.2 O.sub.3, Ta.sub.2 O.sub.5 and a compound selected from strontium hydroxide or strontium nitrate, grinding the mixture, shaping the ground mixture at elevated temperature and pressure to form a pellet of bismuth strontium tantalum oxide having a fluorite structure and then heating the pellet in a flow of oxygen at 800-1000.degree. C. until a single phase bismuth layered compound is obtained.

Abstract: A heat treatment method heats an oxide optical crystal in an oxygen atmosphere containing ozone to improve the light absorption characteristics of the oxide optical crystal so that the light absorption of the oxide optical crystal with light in wavelength bands other than light in wavelength bands with which the oxide optical crystal exerts the intrinsic absorption is reduced to the least possible extent. Guided-optical-wave propagation devices and optical devices, such as optical isolators, optical recording media and second harmonic generators, employing the oxide optical crystal having these improved absorption characteristics, operate at a high efficiency.

Abstract: An optical waveguide device is disclosed which comprises a KTiOPO.sub.4 single crystal substrate and an amorphous optical waveguide formed of Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 doped with TiO.sub.2. A second harmonic generator device in the form of the Cerenkov radiation using the optical waveguide has high SHG efficiency. Since the Cerenkov angle can be made small by optimizing the dimensions, the spread angle of the SHG light can be made small.