Abstract: A semiconductor composite device is provided that includes a voltage regulator, a package board, and a load, and converts an input DC voltage into a different DC voltage to supply the converted DC voltage to the load. The VR includes a semiconductor active element. The package board includes a C layer in which a capacitor is formed, and an L layer in which an inductor is formed. A plurality of through holes penetrate the C layer and the L layer in a direction perpendicular to the mounting face in the package board. The capacitor is connected to the load through the through hole. The inductor is connected to the load through the through hole and to the VR through the through hole.

Abstract: An electronic component includes a single-layer glass plate, an outer-surface conductor that is disposed above an outer surface of the single-layer glass plate and that is at least a part of an electrical element, and a terminal electrode that is a terminal of the electrical element. The terminal electrode is disposed above the outer surface of the single-layer glass plate and being electrically connected to the outer-surface conductor.

Abstract: A semiconductor composite device is provided that includes a voltage regulator, a package board, and a load, and converts an input DC voltage into a different DC voltage to supply the converted DC voltage to the load. The VR includes a semiconductor active element. The package board includes a C layer in which a capacitor is formed, and an L layer in which an inductor is formed. A plurality of through holes penetrate the C layer and the L layer in a direction perpendicular to the mounting face in the package board. The capacitor is connected to the load through the through hole. The inductor is connected to the load through the through hole and to the VR through the through hole.

Abstract: A semiconductor composite device is provided that includes a voltage regulator, a package board, and a load, and converts an input DC voltage into a different DC voltage to supply the converted DC voltage to the load. The VR includes a semiconductor active element. The package board includes a C layer in which a capacitor is formed, and an L layer in which an inductor is formed. A plurality of through holes penetrate the C layer and the L layer in a direction perpendicular to the mounting face in the package board. The capacitor is connected to the load through the through hole. The inductor is connected to the load through the through hole and to the VR through the through hole.

Abstract: A semiconductor composite device is provided that includes a voltage regulator, a package board, and a load, and converts an input DC voltage into a different DC voltage to supply the converted DC voltage to the load. The VR includes a semiconductor active element. The package board includes a C layer in which a capacitor is formed, and an L layer in which an inductor is formed. A plurality of through holes penetrate the C layer and the L layer in a direction perpendicular to the mounting face in the package board. The capacitor is connected to the load through the through hole. The inductor is connected to the load through the through hole and to the VR through the through hole.

Abstract: An electronic component includes a single-layer glass plate, an outer-surface conductor that is disposed above an outer surface of the single-layer glass plate and that is at least a part of an electrical element, and a terminal electrode that is a terminal of the electrical element. The terminal electrode is disposed above the outer surface of the single-layer glass plate and being electrically connected to the outer-surface conductor.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.