Abstract: A vehicle lamp includes a mirror, a plurality of light-emitting elements, and a lens. The mirror is capable of rotating a mirror surface around a rotary axis in a vertical direction. The mirror surface extends along the rotary axis. The light-emitting elements are arranged on a lateral side more than the mirror in a vehicle width direction. The lens irradiates a range wider than the mirror with light from the light-emitting elements. The light-emitting elements are disposed apart from each other such that light distribution images of the light reflected by the mirror surface are aligned along the vehicle width direction. The mirror rotates to combine the adjacent light distribution images and form a main light distribution pattern.

Abstract: A vehicle lamp includes a mirror, a plurality of light-emitting elements, and a lens. The mirror is capable of rotating a mirror surface around a rotary axis in a vertical direction. The mirror surface extends along the rotary axis. The light-emitting elements are arranged on a lateral side more than the mirror in a vehicle width direction. The lens irradiates a range wider than the mirror with light from the light-emitting elements. The light-emitting elements are disposed apart from each other such that light distribution images of the light reflected by the mirror surface are aligned along the vehicle width direction. The mirror rotates to combine the adjacent. light distribution images and form a main light distribution pattern.

Abstract: [Problems to be solved] A physical/chemical sensor that enables reduction of the size of the sensor and formation of arrays of the sensors is provided. The sensor can sense small change of surface stress and can measure mass of fixed specific substance. Also, a measuring method of the specific substance using the sensor is provided. [Means for solving problems] A physical/chemical sensor has a movable membrane (3) having a diaphragm structure provided to form a hollow section (2) between the movable membrane (3) and a light receiving surface of a light receiving element (1), a first piezoelectric membrane (4) that is provided on a front-side surface or a backside surface of the movable membrane (3) and that excites the movable membrane (3), and a second piezoelectric membrane (5) that is provided on the front-side surface or the backside surface of the movable membrane (3) and that senses a voltage caused by oscillation of the movable membrane (3).

Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

Abstract: A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.

Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.

Abstract: The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.

Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.

Abstract: The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.

Abstract: A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.

Abstract: A distortion compensating circuit comprises a frequency control section, a filtering section and an eliminating section. Major frequencies are detected from an input signal including major signals having the major frequencies by a major frequency detector performing spectrum analysis of the input signal. Receiving the major frequencies, the frequency control section calculates distortion frequencies from the major frequencies based on predetermined formulae representing the nonlinear distortion. The predetermined formulae are stored in advance. The frequency control section generates frequency control signals indicating the distortion frequencies. After the input signal is divided into a first signal and a second signal, the filtering section extracts frequency components having the distortion frequencies from the first signal in response to the frequency control signals.