Abstract: It is an object to provide an organic fluorescent substance which can be used in a light emitting transistor element and an organic EL element. The invention provides a light emitting transistor element or an organic electroluminescence element wherein a specific asymmetric pyrene based compound is used in a light emitting layer in the light emitting transistor element, or in a light emitting layer, a hole transporting layer or an electron transporting layer in the organic EL element.

Abstract: Light emitting devices having charge transporting layers comprising one or more metal complexes are provided. More particularly, devices include hole transporting layers comprising at least one organometallic complex are disclosed. The present devices can further comprise an electron blocking layer for improved efficiency.

Abstract: An organic semiconductor device includes organic semiconductor layers (3, 4) and an electron injecting electrode (5) which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (3, 4). The MgAu alloy forming the electron injecting electrode (5) may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode (2) for injecting holes into the organic semiconductor layers (3, 4). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.

Abstract: Light emitting devices having charge transporting layers comprising one or more metal complexes are provided. More particularly, devices include hole transporting layers comprising at least one organometallic complex are disclosed. The present devices can further comprise an electron blocking layer for improved efficiency.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: Light emitting devices having charge transporting layers comprising one or more metal complexes are provided. More particularly, devices include hole transporting layers comprising at least one metal complex are disclosed. The present devices can further comprise an electron blocking layer for improved efficiency.

Abstract: The device according to the invention is a device having organic thin films containing a light-emitting layer between an anode and a cathode that emits light by application of electric energy, characterized in that the light-emitting device contains at least a compound having the basic skeleton represented by the following General Formula (1) or (2). Use of the condensed polycyclic compound according to the invention allows production of high-brightness, high-efficiency light-emitting device superior in color purity.

Abstract: Emissive phosphorescent organometallic compounds are described that produce improved electroluminescence, particularly in the blue region of the visible spectrum. Organic light emitting devices employing such emissive phosphorescent organometallic compounds are also described. Also described is an organic light emitting layer including a host material having a lowest triplet excited state having a decay rate of less than about 1 per second; a guest material dispersed in the host material, the guest material having a lowest triplet excited state having a radiative decay rate of greater than about 1×105 or about 1×106 per second and wherein the energy level of the lowest triplet excited state of the host material is lower than the energy level of the lowest triplet excited state of the guest material.

Abstract: Emissive phosphorescent organometallic compounds are described that produce improved electroluminescence, particularly in the blue region of the visible spectrum. Organic light emitting devices employing such emissive phosphorescent organometallic compounds are also described. Also described is an organic light emitting layer including a host material having a lowest triplet excited state having a decay rate of less than about 1 per second; a guest material dispersed in the host material, the guest material having a lowest triplet excited state having a radiative decay rate of greater than about 1×105 or about 1×106 per second and wherein the energy level of the lowest triplet excited state of the host material is lower than the energy level of the lowest triplet excited state of the guest material.

Abstract: The present invention is directed to simplified OLED structures comprising an anode layer, a hole injecting layer (HIL) in direct contact with the anode layer, an emissive organic electron transporting layer (ETL) in direct contact with the hole injecting layer, and a cathode layer in direct contact with the emissive organic electron transporting layer. The hole injecting material used in the hole injecting layer is characterized, in particular, as being an organic material having an ionization potential that is not more than about 0.7 eV greater than the ionization potential of the material used for the anode layer. The emissive organic electron transporting layer comprises an organic electron transporting material and an organic hole-trapping emissive material, for example, an organic phosphorescent material that produces emission from a triplet excited state of an organic molecule.

Abstract: A highly transparent non-metallic cathode is disclosed that comprises a metal-doped organic electron injection layer that is in direct contact with a transparent non-metallic electron injecting cathode layer, such as indium tin oxide (ITO), wherein the metal-doped organic electron injection layer also functions as an exciton blocking or hole blocking layer. The metal-doped organic electron injection layer is created by diffusing an ultra-thin layer of about 5-10 ? of a highly electropositive metal such as Li throughout the layer. A representative embodiment of the highly transparent non-metallic cathode comprises a layer of ITO, a layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), which acts as an electron injection, exciton blocking, and hole blocking layer, and an ultra-thin layer of lithium, which degenerately dopes the layer of BCP, improving the electron injecting properties of the BCP layer.

Abstract: A 3,6-diphenylcarbazole compound, which has a specific formula and realizes an organic electroluminescent device having high durability and high luminous efficiency. An electroluminescent device which includes an anode; a cathode which faces the anode; and at least one layer including a luminescent layer, optionally a hole transporting layer and an electron transporting layer, which is located between the anode and the cathode, wherein the at least one layer includes the 3,6-diphenylcarbazole compound.

Abstract: Phosphorescent OLEDs having a double doped-layer structure wherein the OLEDs include a hole transporting layer (HTL) having a phosphorescent material doped therein, and an electron transporting layer (ETL) having the same phosphorescent material doped therein. Typically, these phosphorescent OLEDs have an anode, a first HTL over the anode, a second HTL that is doped with a phosphorescent material over the first HTL, a first ETL that is doped with a phosphorescent material over the second HTL, a second ETL over the first ETL, and a cathode over the second ETL. These phosphorescent OLEDs preferably include blue phosphorescent OLEDs with high efficiency levels.

Abstract: The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state.

Abstract: The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state.

Abstract: The present invention relates to an organic light emitting device structure having an organic light emitting device (OLED) over a substrate, where the OLED has, for example, an anode, a hole transporting layer (HTL), a first electron transporting layer (ETL) that is doped with a phosphorescent material, a second electron transporting layer (ETL), and a cathode. The OLEDs of the present invention are directed, in particular, to devices that include an emissive layer comprised of an electron transporting host material having a triplet excited state energy level that is higher than the emissive triplet excited state energy level of the phosphorescent dopant material.

Abstract: A highly transparent non-metallic cathode is disclosed that comprises a metal-doped organic electron injection layer that is in direct contact with a transparent non-metallic electron injecting cathode layer, such as indium tin oxide (ITO), wherein the metal-doped organic electron injection layer also functions as an exciton blocking or hole blocking layer. The metal-doped organic electron injection layer is created by diffusing an ultra-thin layer of about 5-10 Å of a highly electropositive metal such as Li throughout the layer. A representative embodiment of the highly transparent non-metallic cathode comprises a layer of ITO, a layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), which acts as an electron injection, exciton blocking, and hole blocking layer, and an ultra-thin layer of lithium, which degenerately dopes the layer of BCP, improving the electron injecting properties of the BCP layer.

Abstract: A sheet-like display medium includes a switching layer containing a switching material having a light absorption spectrum which changes in a visible light range when a voltage no less than a threshold value is applied while also maintaining the changed light absorption spectrum even after the voltage application is interrupted, and an electrode layer laminated on the switching layer. The switching material may be an organic metal complex such as Cu-TCNQ or Ag-TCNQ.

Abstract: An organic light emitting device structure having an organic light emitting device (OLED) over a substrate, where the OLED has, for example, an anode, a hole transporting layer (HTL), a first electron transporting layer (ETL) that is doped with a phosphorescent material, a second electron transporting layer (ETL), and a cathode. The OLEDs of the present invention are directed, in particular, to devices that include an emissive layer comprised of an electron transporting host material having a triplet excited state energy level that is higher than the emissive triplet excited state energy level of the phosphorescent dopant material.

Abstract: A highly transparent non-metallic cathode is disclosed that comprises a metal-doped organic electron injection layer that is in direct contact with a transparent non-metallic electron injecting cathode layer, such as indium tin oxide (ITO), wherein the metal-doped organic electron injection layer also functions as an exciton blocking or hole blocking layer. The metal-doped organic electron injection layer is created by diffusing an ultra-thin layer of about 5-10 Å of a highly electropositive metal such as Li throughout the layer. A representative embodiment of the highly transparent non-metallic cathode comprises a layer of ITO, a layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), which acts as an electron injection, exciton blocking, and hole blocking layer, and an ultra-thin layer of lithium, which degenerately dopes the layer of BCP, improving the electron injecting properties of the BCP layer.