Abstract: A power supply device according to an embodiment is configured to supply DC power to an electrolytic cell producing hydrogen by electrolysis. The power supply device includes a power converter, a reactor, and a filter circuit; the power converter is self-commutated and includes a first output terminal and a second output terminal; the second output terminal is configured to output a positive voltage with respect to the first output terminal; the reactor is connected in series to at least one of the first output terminal or the second output terminal; and the filter circuit is connected between an anode and a cathode of the electrolytic cell. The filter circuit is a low-pass filter. A cutoff frequency of the filter circuit is set to be less than a switching frequency of the power converter.

Abstract: The robot includes a storage unit and a control unit. The control unit acquires outside stimulus feature amounts that are feature amounts of an outside stimulus acting from outside, stores the acquired outside stimulus feature amounts in the storage unit as a history, compares outside stimulus feature amounts acquired at a certain timing with outside stimulus feature amounts stored in the storage unit to calculate a first similarity degree, and controls operations based on the calculated first similarity degree.

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Abstract: Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).

Abstract: Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).

Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Abstract: To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.

Abstract: [PROBLEMS] To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. [MEANS FOR SOLVING PROBLEMS] A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.

Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.

Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I-I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I-I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.