Abstract: A non-contact-type apparatus for measuring wafer thickness includes a monolithic-type wavelength sweeping semiconductor laser light source having a laser source, a laser control unit that controls the laser source, and a processor to control the laser source to oscillate laser light having a wavelength that changes with a setting profile relative to time; an optical system that guides and emits the laser light onto a wafer; a detection unit that detects an interference light signal of reflected light; an A/D converter that converts the interference light signal detected by the detection unit into a digital signal; and a calculation unit that calculates a thickness of the wafer by analyzing the digital signal from the A/D converter. The processor causes the laser control unit to operate with a clock signal, and to oscillate laser light that performs wavelength-sweeping with the setting profile relative to the time, from the laser source.

Abstract: The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.

Abstract: The method is capable of producing a sapphire single crystal without forming cracks and without using an expensive crucible. The method comprises the steps of: putting a seed crystal and a raw material in a crucible; setting the crucible in a cylindrical heater; heating the crucible; and producing temperature gradient in the cylindrical heater so as to sequentially crystallize a melt. The crucible is composed of a material having a specific linear expansion coefficient which is capable of preventing mutual stress, which is caused by a difference between a linear expansion coefficient of the crucible and that of the sapphire single crystal in a direction perpendicular to a growth axis thereof, from generating in the crucible and the sapphire single crystal, or which is capable of preventing deformation of the crucible without generating a crystal defect caused by the mutual stress in the sapphire single crystal.

Abstract: Cloth cleaning device of a polishing machine which is capable of fully cleaning a polishing cloth including a part in the vicinity of a center roller. The cloth cleaning device includes an arm movable in a plane parallel to the polishing cloth between a first position above the polishing cloth and a second position outside of the polishing cloth. A jet nozzle is attached to the arm and directs high pressure water toward the polishing cloth. An enclosing member encloses the jet nozzle so as to prevent the high pressure water, which has been directed out from the jet nozzle, from scattering. The jet nozzle is oriented toward the center roller and the high pressure water is directed toward the part of the polishing cloth in the vicinity of the center roller when the arm moves the jet nozzle close to the center roller.

Abstract: The flatness measuring equipment can highly precisely measure flatness of a surface of a large-sized planar member, e.g., an abrasive plate. In the equipment, an elongated member is provided above and parallel to the surface of the planar member to be measured. A movable member is provided to the elongated member and capable of moving along the elongated member. A distance sensor, which is provided to the movable member, measures distance between the movable member and the surface of the planar member. A laser beam source emits a laser beam, at a fixed level, toward the movable member. A light receiving sensor detects a variation of a level of the movable member with respect of the fixed level of the laser beam.