Abstract: The present invention relates to a organopolysiloxane graft polymer including an organopolysiloxane segment as a main chain thereof and an unsaturated monomer-derived polymer segment as a side chain thereof, in which the unsaturated monomer-derived polymer segment contains a repeating unit derived from N,N-dimethyl acrylamide in an amount of not less than 50% by mass and not more than 100% by mass, and a content of the organopolysiloxane segment in the organopolysiloxane graft polymer is not less than 10% by mass and not more than 70% by mass.

Abstract: The present invention relates to a organopolysiloxane graft polymer including an organopolysiloxane segment as a main chain thereof and an unsaturated monomer-derived polymer segment as a side chain thereof, in which the unsaturated monomer-derived polymer segment contains a repeating unit derived from N,N-dimethyl acrylamide in an amount of not less than 50% by mass and not more than 100% by mass, and a content of the organopolysiloxane segment in the organopolysiloxane graft polymer is not less than 10% by mass and not more than 70% by mass.

Abstract: The present invention relates to a organopolysiloxane graft polymer including an organopolysiloxane segment as a main chain thereof and an unsaturated monomer-derived polymer segment as a side chain thereof, in which the unsaturated monomer-derived polymer segment contains a repeating unit derived from N,N-dimethyl acrylamide in an amount of not less than 50% by mass and not more than 100% by mass, and a content of the organopolysiloxane segment in the organopolysiloxane graft polymer is not less than 10% by mass and not more than 70% by mass.

Abstract: The present invention relates to a organopolysiloxane graft polymer including an organopolysiloxane segment as a main chain thereof and an unsaturated monomer-derived polymer segment as a side chain thereof, in which the unsaturated monomer-derived polymer segment contains a repeating unit derived from N,N-dimethyl acrylamide in an amount of not less than 50% by mass and not more than 100% by mass, and a content of the organopolysiloxane segment in the organopolysiloxane graft polymer is not less than 10% by mass and not more than 70% by mass.

Abstract: One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

Abstract: One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

Abstract: One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

Abstract: One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.

Abstract: One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

Abstract: One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.