Patents by Inventor Chihiro Taguchi

Chihiro Taguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7544393
    Abstract: The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: June 9, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
  • Patent number: 7067178
    Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: June 27, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
  • Publication number: 20060115600
    Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.
    Type: Application
    Filed: January 12, 2006
    Publication date: June 1, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
  • Publication number: 20040168640
    Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.
    Type: Application
    Filed: November 25, 2003
    Publication date: September 2, 2004
    Inventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
  • Patent number: 6492612
    Abstract: The present invention is constituted of a lower electrode structure (1) comprising a base table (2) formed of a conductive material, an electrostatic adsorption member (3) formed on the base table (2) and having a dielectric layer (4) on which the substrate to be mounted and within which an electrode (5) electrically isolated from the base table (2) is housed, first wiring (7) having an end connected to the electrode (3) of the electrostatic adsorption member, a direct-current source (8) connected to the other end of the first wiring (7), second wiring (10) having an end connected to the base table (2), a high frequency source (11) connected to the other end of the second wiring (10), a third wiring (14) for connecting the first wiring (7) and the second wiring (10), and a capacitor (13) formed on the third wiring (14). Plasma processing is performed by disposing the lower electrode structure (1) in the chamber (21).
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: December 10, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Chihiro Taguchi, Ryo Nonaka