Abstract: A substrate processing method includes: forming a metal film, which changes in volume when the metal film is oxidized, on a rear surface of a substrate; forming an oxide film, through which oxygen permeates, on a front surface of the metal film; and applying stress to the substrate by oxidizing the metal film.

Abstract: A film forming apparatus includes chambers configured to perform a film forming process, a carrier configured to hold a substrate to be subjected to the film forming process in the chambers, and a transport mechanism configured to successively transport the carrier through the chambers. The carrier includes a support surface configured to support the carrier from below when transporting the carrier, and the support surface is provided parallel to the transport direction. The chambers include rotating members, provided parallel to the transport direction, and configured to make contact with the support surface when transporting the carrier. The rotating members are made of a magnetic material, and a magnet is provided around each of the rotating members.

Abstract: Falling of a substrate and deformation or breakage of the substrate are inhibited. A substrate holder includes a hole portion in which a disk-shaped substrate is placed upright, and at least four supporting members attached elastically-deformably on a periphery of the hole portion. Two of the four supporting members support disk-shaped substrate at first- and second-side circumferential end portions of disk-shaped substrate positioned at vertical-direction upper positions of disk-shaped substrate. Remaining two of the four supporting members support disk-shaped substrate at third- and fourth-side circumferential end portions of disk-shaped substrate positioned at vertical-direction lower positions of disk-shaped substrate. Central angle in disk-shaped substrate between either first- or second-side circumferential end portion and uppermost end portion of disk-shaped substrate is from 15° through 40°.

Abstract: A manufacturing method for a semiconductor device includes forming a dielectric film on a semiconductor substrate or on a lower electrode that is formed on a semiconductor substrate, attaching a metal to a predetermined area on a surface of the dielectric film selectively, forming a metal oxide film with an insulation property in the predetermined area on the surface of the dielectric film by applying heat treatment to the metal, and forming an upper electrode on the dielectric film in a state where the metal oxide film is formed in the predetermined area on the surface of the dielectric film.

Abstract: A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.

Abstract: Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the method includes providing in a process chamber a plurality of nanowires separated from each other by a void, where the plurality of nanowires have a height and at least substantially right angle corners, forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma, removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires, and repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

Abstract: Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the method includes providing in a process chamber a plurality of nanowires separated from each other by a void, where the plurality of nanowires have a height and at least substantially right angle corners, forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma, removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires, and repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract: A semiconductor device manufacturing method includes forming a first high-k insulating film on a processing target object; performing a crystallization heat-treatment process on the first high-k insulating film at a temperature equal to or higher than about 650° C. for a time less than about 60 seconds; and forming, on the first high-k insulating film, a second high-k insulating film containing a metal element having an ionic radius smaller than that of a metal element of the first high-k insulating film and having a relative permittivity higher than that of the first high-k insulating film.

Abstract: Physiologically active substances ML-236 of the formula ##STR1## wherein R is hydrogen atom, hydroxy group or 2-methyl-butyryloxy group having cholesterol- and lipid-lowering effects in blood and liver and thus utility as hypocholesteremic and hypolipemic medicaments. They are obtained by cultivation of an ML-236-producing micro-organism belonging to the genus Penicillium in a culture medium and subsequent recovery thereof from a cultured broth.

Abstract: Physiologically active substances ML-236 of the formula ##SPC1##Wherein R is hydrogen atom, hydroxy group or 2-methylbutyryloxy group having cholesterol- and lipid-lowering effects in blood and liver and thus utility as hypocholesteremic and hypolipemic medicaments. They are obtained by cultivation of an ML-236-producing microorganism belonging to the genus Penicillium in a culture medium and subsequent recovery thereof from a cultured broth.