Patents by Inventor Chiho Kokubo
Chiho Kokubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210118916Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: ApplicationFiled: December 24, 2020Publication date: April 22, 2021Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
-
Patent number: 10879272Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: GrantFiled: December 23, 2019Date of Patent: December 29, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
-
Publication number: 20200135770Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: ApplicationFiled: December 23, 2019Publication date: April 30, 2020Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
-
Patent number: 10515983Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: GrantFiled: July 18, 2019Date of Patent: December 24, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
-
Publication number: 20190341404Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: ApplicationFiled: July 18, 2019Publication date: November 7, 2019Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
-
Patent number: 10361222Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: GrantFiled: February 15, 2018Date of Patent: July 23, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
-
Publication number: 20180190677Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: ApplicationFiled: February 15, 2018Publication date: July 5, 2018Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
-
Patent number: 9899419Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: GrantFiled: October 27, 2015Date of Patent: February 20, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
-
Publication number: 20170025546Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.Type: ApplicationFiled: October 5, 2016Publication date: January 26, 2017Inventors: Chiho KOKUBO, Aiko SHIGA, Shunpei YAMAZAKI, Hidekazu MIYAIRI, Koji DAIRIKI, Koichiro TANAKA
-
Publication number: 20160111451Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: ApplicationFiled: October 27, 2015Publication date: April 21, 2016Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
-
Patent number: 9178069Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.Type: GrantFiled: July 31, 2009Date of Patent: November 3, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
-
Patent number: 8314426Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.Type: GrantFiled: September 15, 2011Date of Patent: November 20, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Chiho Kokubo, Hirokazu Yamagata, Shunpei Yamazaki
-
Publication number: 20120097963Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.Type: ApplicationFiled: December 30, 2011Publication date: April 26, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Chiho KOKUBO, Aiko Shiga, Shunpei Yamazaki, Hidekazu Miyairi, Koji Dairiki, Koichiro Tanaka
-
Publication number: 20120062809Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.Type: ApplicationFiled: September 15, 2011Publication date: March 15, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Chiho KOKUBO, Hirokazu YAMAGATA, Shunpei YAMAZAKI
-
Patent number: 8093593Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.Type: GrantFiled: September 7, 2006Date of Patent: January 10, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Chiho Kokubo, Aiko Shiga, Shunpei Yamazaki, Hidekazu Miyairi, Koji Dairiki, Koichiro Tanaka
-
Patent number: 8026518Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.Type: GrantFiled: April 7, 2010Date of Patent: September 27, 2011Assignee: Semiconductor Energy Laboratory Co. Ltd.Inventors: Chiho Kokubo, Hirokazu Yamagata, Shunpei Yamazaki
-
Patent number: 7795734Abstract: To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements.Type: GrantFiled: December 11, 2006Date of Patent: September 14, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Chiho Kokubo, Koichiro Tanaka, Akihisa Shimomura, Tatsuya Arao, Hidekazu Miyairi
-
Publication number: 20100195012Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.Type: ApplicationFiled: April 7, 2010Publication date: August 5, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Chiho KOKUBO, Hirokazu YAMAGATA, Shunpei YAMAZAKI
-
Patent number: 7749818Abstract: An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.Type: GrantFiled: January 28, 2003Date of Patent: July 6, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Chiho Kokubo, Koichiro Tanaka, Akihisa Shimomura, Tatsuya Arao, Hidekazu Miyairi, Mai Akiba
-
Patent number: 7737506Abstract: An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.Type: GrantFiled: August 31, 2006Date of Patent: June 15, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Chiho Kokubo, Koichiro Tanaka, Akihisa Shimomura, Tatsuya Arao, Hidekazu Miyairi, Mai Akiba