Patents by Inventor Chihping Kuo
Chihping Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7345323Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 ? cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.Type: GrantFiled: March 30, 2005Date of Patent: March 18, 2008Assignee: Philips Lumileds Lighting Company LLCInventors: Werner K. Goetz, Michael D. Camras, Xiaoping Chen, legal representative, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald, Changhua Chen
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Publication number: 20050167693Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 ? cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.Type: ApplicationFiled: March 30, 2005Publication date: August 4, 2005Inventors: Werner Goetz, Michael Camras, Changhua Chen, Xiaoping Chen, Gina Christenson, R. Kern, Chihping Kuo, Paul Martin, Daniel Steigerwald
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Patent number: 6914272Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 ?cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.Type: GrantFiled: November 24, 2003Date of Patent: July 5, 2005Assignee: Lumileds Lighting U.S., LLCInventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
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Publication number: 20040075097Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.Type: ApplicationFiled: November 24, 2003Publication date: April 22, 2004Inventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
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Patent number: 6680963Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.Type: GrantFiled: July 24, 2001Date of Patent: January 20, 2004Assignee: Lux Net CorporationInventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Patent number: 6657300Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.Type: GrantFiled: January 5, 2001Date of Patent: December 2, 2003Assignee: Lumileds Lighting U.S., LLCInventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
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Patent number: 6553053Abstract: A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.Type: GrantFiled: July 25, 2001Date of Patent: April 22, 2003Assignee: LuxNet CorporationInventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Patent number: 6534331Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.Type: GrantFiled: July 24, 2001Date of Patent: March 18, 2003Assignee: LuxNet CorporationInventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Publication number: 20030021326Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.Type: ApplicationFiled: July 24, 2001Publication date: January 30, 2003Inventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Publication number: 20030021318Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a material that has been doped with impurities that increase the resistance of the material to a value greater than 5×106 ohm-cm.Type: ApplicationFiled: July 24, 2001Publication date: January 30, 2003Inventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Publication number: 20030021317Abstract: A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.Type: ApplicationFiled: July 25, 2001Publication date: January 30, 2003Inventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Publication number: 20030022406Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.Type: ApplicationFiled: July 24, 2001Publication date: January 30, 2003Inventors: Andrew Shuh-Huei Liao, Ghulam Hasnain, Chihping Kuo, Hao-Chung Kuo, Zhiqing Shi, Minh Ngoc Trieu
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Publication number: 20020008243Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.Type: ApplicationFiled: January 5, 2001Publication date: January 24, 2002Inventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Xiaoping Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
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Patent number: 6274399Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.Type: GrantFiled: September 6, 2000Date of Patent: August 14, 2001Assignee: LumiLeds Lighting, U.S. LLCInventors: R. Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo
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Patent number: 6194742Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGal1-x-yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1-x-yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.Type: GrantFiled: June 5, 1998Date of Patent: February 27, 2001Assignee: LumiLeds Lighting, U.S., LLCInventors: R. Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo
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Patent number: 5233204Abstract: A light emitting diode (LED) including a light generation region situated on a light-absorbing substrate also includes a thick transparent layer which ensures that an increased amount of light is emitted from the sides of the LED and only a minimum amount of light is absorbed by the substrate. The thickness of the transparent layer is determined as a function of its width and the critical angle at which light is internally reflected within the transparent layer. The thick transparent layer is located either above, below or both above and below the light generation region. The thick transparent layer may be made of materials and with fabrication processes different from the light generation region.Type: GrantFiled: January 10, 1992Date of Patent: August 3, 1993Assignee: Hewlett-Packard CompanyInventors: Robert M. Fletcher, Kuo-Hsin Huang, Chihping Kuo, Jiann Yu, Timothy D. Osentowski
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Patent number: 5008718Abstract: A light-emitting diode has a semiconductor substrate underlying active p-n junction layers of AlGaInP for emitting light. A transparent window layer of semiconductor different from AlGaInP overlies the active layers and has a lower electrical resistivity than the active layers and a bandgap greater than the bandgap of the active layers, for minimizing current crowding from a metal electrical contact over the transparent window layer. The active layers may be epitaxially grown on a temporary GaAs substrate. A layer of lattice mismatched GaP is then grown on the active layers with the GaP having a bandgap greater than the bandgap of the active layers so that it is transparent to light emitted by the LED. The GaAs temporary substrate is then selectively etched away so that the GaP acts as a transparent substrate. A transparent window layer may be epitaxially grown over the active layers on the face previously adjacent to the GaAs substrate.Type: GrantFiled: December 18, 1989Date of Patent: April 16, 1991Inventors: Robert M. Fletcher, Chihping Kuo, Timothy D. Osentowski, Virginia M. Robbins