Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A data retransmission method includes configuring the quantity of code block groups in a transport block and configuring a plurality of physical resource groups; configuring the quantity of physical resources included in each of the physical resource groups according to the different quantities of code block groups; selecting the physical resources included in the physical resource group that corresponds to the initial transmission to send the transport block; determining the quantity of code block groups that were erroneously sent in the transport block according to the response; selecting one of the physical resources in one of the physical resource groups that corresponds to the retransmission to send at least one code block group that was erroneously sent according to the quantity of code block groups that were erroneously sent; and completing the retransmission only after all of the code block groups in the transport block have been successfully sent.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.

Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A manufacturing method of a semiconductor structure including the following steps is provided. A first substrate is provided. A first dielectric structure is formed on the first substrate. At least one first cavity is formed in the first dielectric structure. A first stress adjustment layer is formed in the first cavity. The first stress adjustment layer covers the first dielectric structure. A second substrate is provided. A second dielectric structure is formed on the second substrate. At least one second cavity is formed in the second dielectric structure. A second stress adjustment layer is formed in the second cavity. The second stress adjustment layer covers the second dielectric structure. The first stress adjustment layer and the second stress adjustment layer are bonded.

Abstract: A base station management device is provided in the invention. The base station management device includes a Non-Real Time (Non-RT) Radio-Access-Network Intelligent Controller (RIC) and a management device. The Non-RT RIC communicates with applications through a first communication interface. The management device manages a plurality of base stations, communicates with the Non-RT RIC through a second communication interface, and registers a first application and a second application through the Non-RT RIC. The management device detects the plurality of base stations through the first application to determine whether to update the parameter information of the plurality of base stations through the second application.

Abstract: A method for communication in service management and orchestration is provided. The method includes receiving, by a Non-real time radio access network (RAN) Intelligent Controller (Non-RT RIC) framework, a first subscription message from an Element Management System (EMS), wherein the first subscription message is used to request second data used to run a Non-RT RIC application (rApp). The method includes transmitting, by the Non-RT RIC framework, a first callback message to the rApp according to the first subscription message to notify the rApp that the EMS requests the second data.

Abstract: A data retransmission method includes configuring the quantity of code block groups in a transport block and configuring a plurality of physical resource groups; configuring the quantity of physical resources included in each of the physical resource groups according to the different quantities of code block groups; selecting the physical resources included in the physical resource group that corresponds to the initial transmission to send the transport block; determining the quantity of code block groups that were erroneously sent in the transport block according to the response; selecting one of the physical resources in one of the physical resource groups that corresponds to the retransmission to send at least one code block group that was erroneously sent according to the quantity of code block groups that were erroneously sent; and completing the retransmission only after all of the code block groups in the transport block have been successfully sent.

Abstract: A method for detecting and preventing the operation of a rogue access point (AP) by issuing deauthentication packets thereto includes receiving beacon packets of all wireless APs in a wireless network area, obtaining timestamps, and establishing a clock skew model for each wireless AP accordingly. Each clock skew model can be held abnormal according to a growth slope of the clock skew model, and the wireless AP corresponding to an abnormal clock offset model can be defined as a rogue AP. Position and distance range of the rogue AP can be established by RSSIs, and a specified authorized AP adjacent to the rogue AP can be selected and controlled to send deauthentication packets to the rogue AP. A device for detecting and restraining the rogue AP is also provided.

Abstract: A method for detecting and preventing the operation of a rogue access point (AP) by issuing deauthentication packets thereto includes receiving beacon packets of all wireless APs in a wireless network area, obtaining timestamps, and establishing a clock skew model for each wireless AP accordingly. Each clock skew model can be held abnormal according to a growth slope of the clock skew model, and the wireless AP corresponding to an abnormal clock offset model can be defined as a rogue AP. Position and distance range of the rogue AP can be established by RSSIs, and a specified authorized AP adjacent to the rogue AP can be selected and controlled to send deauthentication packets to the rogue AP. A device for detecting and restraining the rogue AP is also provided.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first silicon layer, an insulating layer on the first silicon layer, and a second silicon layer on the insulating layer; forming a metal-oxide semiconductor (MOS) transistor on the substrate; forming an interlayer dielectric layer (ILD) on the MOS transistor; removing part of the ILD layer to form a first trench to expose the insulating layer; and performing a wet etching process through the first trench to remove part of the insulating layer for forming a first air gap under the MOS transistor.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first silicon layer, an insulating layer on the first silicon layer, and a second silicon layer on the insulating layer; forming a metal-oxide semiconductor (MOS) transistor on the substrate; forming an interlayer dielectric layer (ILD) on the MOS transistor; removing part of the ILD layer to form a first trench to expose the insulating layer; and performing a wet etching process through the first trench to remove part of the insulating layer for forming a first air gap under the MOS transistor.

Abstract: The present disclosure recites a distributed storage method applied in a distributed file system, and the method including steps: splitting the original file into data blocks and storing in a data block queue; assigning multiple data nodes to form a first pipe to transmit a first data block from the data block queue, and when the first one of the data nodes in the first pipe have been written in the data block, assigning another multiple data nodes to form a second pipe to transmit a second data block from the data block queue; transmitting the pipes when the overall data nodes of the first and second pipes been written in the first and second data blocks. The present disclosure also provides a distributed storage system, and all of them can improve the transmission speed of the distributed file system.

Abstract: A support apparatus and a support method are provided, the support apparatus includes: a support substrate for bearing a supported component, the support substrate having a first main surface facing the supported component and a second main surface positioned on a side opposite to the first main surface; and a pressure distribution plate, arranged on the first main surface of the support substrate and positioned between the support substrate and the supported component, wherein the pressure distribution plate is configured to bring the supported component to be separated from the support substrate.

Abstract: The present disclosure recites a distributed storage method applied in a distributed file system, and the method including steps: splitting the original file into data blocks and storing in a data block queue; assigning multiple data nodes to form a first pipe to transmit a first data block from the data block queue, and when the first one of the data nodes in the first pipe have been written in the data block, assigning another multiple data nodes to form a second pipe to transmit a second data block from the data block queue; transmitting the pipes when the overall data nodes of the first and second pipes been written in the first and second data blocks. The present disclosure also provides a distributed storage system, and all of them can improve the transmission speed of the distributed file system.

Abstract: A support apparatus and a support method are provided, the support apparatus includes: a support substrate for bearing a supported component, the support substrate having a first main surface facing the supported component and a second main surface positioned on a side opposite to the first main surface; and a pressure distribution plate, arranged on the first main surface of the support substrate and positioned between the support substrate and the supported component, wherein the pressure distribution plate is configured to bring the supported component to be separated from the support substrate.

Abstract: A housing assembly of an electronic device includes an outer housing, an inner housing mounted to the outer housing, a first waterproof film positioned between the outer housing and the inner housing, and a second waterproof film spaced from the first waterproof film. The first waterproof film, the outer housing, and the inner housing cooperatively define a first cavity of the housing assembly. The second waterproof film, the inner housing, and the first waterproof film cooperatively form a second cavity of the housing assembly. The first and second waterproof films provide the housing assembly an excellent waterproof property. The electronic device using the housing assembly is also described.