Patents by Inventor Chii-Dong Chen

Chii-Dong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10784343
    Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: September 22, 2020
    Assignee: ACADEMIA SINICA
    Inventors: Chii Dong Chen, Li Chu Tsai, Chia Jung Chu, Ying Pin Wu
  • Publication number: 20190206990
    Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
    Type: Application
    Filed: December 28, 2017
    Publication date: July 4, 2019
    Inventors: Chii Dong CHEN, Li Chu TSAI, Chia Jung CHU, Ying Pin WU
  • Publication number: 20090053425
    Abstract: A method for producing single-dimensioned gold-nano-particle patterns having a single-particle resolution in which the line-width is only limited by the particle size. Initially, a focused electron beam is used to generate a positive charge layer on an SiO2 surface. Biotinated DNA molecules attracted by these positive charges are then used to acquire Au-nano-particles revealing the e-beam exposure patterns. The particles in the single-line patterns become separated in an orderly manner, due to the repulsive force between different Au colloidal particles. Each single-line pattern has potential use in nano-photonics and nano-electronics. In nano-electronics, the line patterns serve as a template for high or low resistance conductive nano-wires. Low resistance wires exhibit linear current-voltage characteristics with an extremely high maximum allowed current density. The high resistance wires display charging effect with clear Coulomb oscillation behavior at low temperatures.
    Type: Application
    Filed: August 21, 2007
    Publication date: February 26, 2009
    Applicant: Academia Sinica
    Inventors: Chii-Dong Chen, Hung-Yi Lin, Li-Chu Tsai
  • Publication number: 20070190536
    Abstract: A pattern transfer method includes providing a substrate, forming a first biomaterial over the substrate, exposing the first biomaterial to a pattern writing agent in a manner consistent with a pattern to be transferred, forming a second biomaterial over the first biomaterial, wherein the second biomaterial reacts and bonds with portions of the first biomaterial not exposed to the pattern writing agent, and does not react and bond with portions of the first biomaterial exposed to the pattern writing agent.
    Type: Application
    Filed: February 16, 2006
    Publication date: August 16, 2007
    Inventors: Chii-Dong Chen, Hung-Yi Lin, Pei-Yin Chi, Li-Chu Tsai
  • Patent number: 6586787
    Abstract: A single electron device. Fabricated from nanoparticle derivatives, particularly from Au and fullerene nanoparticle derivatives, the device reduces thermal fluctuation in the nanoparticle array and has 15 nm of spacing between two electrodes.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: July 1, 2003
    Assignee: Industrial Technology Research Institute
    Inventors: Sheng-Ming Shih, Wei-Fang Su, Yuh-Jiuan Lin, Cen-Shawn Wu, Chii-Dong Chen