Abstract: A semiconductor structure with current flow path direction controlling is provided, which comprises a substrate and an epitaxial layer having a first conductivity type on the substrate. A first doped region is on the substrate and the first doped region has the first or a second conductivity type. A second doped region is enclosed by the epitaxial layer and has the second conductivity type. A third doped region is located in the epitaxial layer and between the first and second doping regions, and the third doped region has the second conductivity type. A fourth doped region is enclosed by the third doped region and has the first conductivity type. A fifth doped region is enclosed by the first doped region and the conductivity type is opposite to that of the first doped region.

Abstract: A semiconductor structure with current flow path direction controlling is provided, which comprises a substrate and an epitaxial layer having a first conductivity type on the substrate. A first doped region is on the substrate and the first doped region has the first or a second conductivity type. A second doped region is enclosed by the epitaxial layer and has the second conductivity type. A third doped region is located in the epitaxial layer and between the first and second doping regions, and the third doped region has the second conductivity type. A fourth doped region is enclosed by the third doped region and has the first conductivity type. A fifth doped region is enclosed by the first doped region and the conductivity type is opposite to that of the first doped region.

Abstract: The invention provides a semiconductor device with a junction termination extension structure on a mesa and a method of fabricating the same. The device comprises: a type-I semiconductor substrate having a first surface and a second surface; a type-I epitaxial layer disposed on the first surface; at least one depression disposed on the type-I epitaxial layer; a mesa-type junction termination extension structure surrounding the at least one depression wherein the mesa-type junction termination extension structure is of type-II; and at least one semiconductor component formed one the depression.

Abstract: The invention provides a semiconductor device with a junction termination extension structure on a mesa and a method of fabricating the same. The device comprises: a type-I semiconductor substrate having a first surface and a second surface; a type-I epitaxial layer disposed on the first surface; at least one depression disposed on the type-I epitaxial layer; a mesa-type junction termination extension structure surrounding the at least one depression wherein the mesa-type junction termination extension structure is of type-II; and at least one semiconductor component formed one the depression.