Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method comprises performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further comprises forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further comprises performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: A film forming method of forming a predetermined film on a substrate by PEALD includes: adsorbing a precursor on the substrate; and forming plasma from a modifying gas and modifying the precursor adsorbed on the substrate with radicals contained in the plasma. Here, the modifying of the precursor includes supplying a radio frequency power having an effective power smaller than 500 W to a plasma source configured to form the plasma from the modifying gas.

Abstract: A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.