Abstract: Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interposing an active layer. An anode electrode and a cathode electrode are formed on the uppermost contact layer. A high resistance region around the cathode electrode is formed at least in an uppermost contact layer by ion implantation using the cathode and anode electrode as a mask. A region under the cathode electrode functions as a Gunn diode and a region under the anode electrode function as a conductive path from the anode electrode to the active layer. These two regions are defined by the high resistance region.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.

Abstract: Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance, wherein 0.1 to 30% by weight of at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide is dispersed in said emitter material.

Abstract: A method for heat-treating a semiconductor body comprising steps of: (a) disposing a susceptor on one surface of the semiconductor body, and disposing a protection plate in such a manner that the other surface of the semiconductor faces to a surface the protection plate, (b) heat-treating the semiconductor body, wherein the susceptor and the protection plate comprises at least one member selected from the group consisting of gallium nitride, aluminum nitride and boron nitride, and at least one of the susceptor and the protection plate has an absorber of infrared ray.

Abstract: A method for heat-treating a compound semiconductor comprising a step of heat-treating a susceptor in a manner as to be disposed on a surface of the compound semiconductor with oposing each other, the susceptor comprising a compound of nitrogen and a group III element such as aluminum nitride.