Abstract: A method for manufacturing a transparent gas barrier film for an organic electroluminescence element having a substrate with a gas barrier layer thereon. The gas barrier layer is formed on the substrate by plasma CVD using an organic silicon compound as a raw material gas and an oxygen gas as a decomposition gas. Formation of the gas barrier layer is carried out so that a carbon content of the gas barrier layer in the thickness direction repeatedly changes more than two times from high value, via intermediate value, low value and intermediate value, to high value.

Abstract: Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.

Abstract: A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.

Abstract: A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Abstract: A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.

Abstract: A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

Abstract: Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.

Abstract: A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

Abstract: An objective of the present invention is to provide a transparent conductive film exhibiting excellent adhesion to a substrate and excellent crack resistance, together with high transparency and conductivity. Also disclosed is a transparent conductive film comprising a substrate having thereon: a low density metal oxide layer made of metal oxide, and a high density metal oxide layer made of metal oxide that are alternately laminated layer by layer, wherein the transparent conductive film satisfies a condition specified by the following inequality (1); 1.01?M2/M1?1.400??(1), provided that a density of the low density metal oxide layer and a density of the high density metal oxide layer are represented by M1 and M2, respectively.

Abstract: A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.

Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

Abstract: A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Abstract: A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

Abstract: A method for producing an ink-jet recording medium, comprising the steps of: (a) shear processing a dispersion of pigment particles at a shear rate of 103 to 105 s?1; (b) mixing the dispersion of pigment particles with a water-soluble polymer to obtain a coating composition; and (c) applying the coating composition onto a surface of a support.

Abstract: A method for producing an ink-jet recording medium, comprising the steps of: (a) shear processing a dispersion of pigment particles at a shear rate of 103 to 105 s−1; (b) mixing the dispersion of pigment particles with a water-soluble polymer to obtain a coating composition; and (c) applying the coating composition onto a surface of a support.

Abstract: Disclosed is a method of producing a silver halide photographic emulsion comprising steps of:(a) forming fine-grain silver halide emulsion in a mixing vessel B separately provided from a reaction vessel A,(b) removing unnecessary ions contained in said fine-grain silver halide emulsion,(c) supplying the fine-grain silver halide emulsion to said reaction vessel A,(d) forming nucleation of a silver halide grain in said reaction vessel A, and(e) forming crystal growth of the silver halide grain in said reaction vessel A.

Abstract: A desalting method of a silver halide emulsion is disclosed, comprising removing soluble salts from the silver halide emulsion by electrodialysis, wherein said electrodialysis is carried out at a pH within a range of .+-.0.5 of an isoelectric point of a gelatin contained in the silver halide emulsion. Furthermore, by adding a salt during the course of the electrodialysis, the concentration of the emulsion is accomplished concurrently with desalting thereof.