Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

Abstract: A photoelectric conversion element includes a composite passivation film disposed on a second surface of a semiconductor substrate that is opposite to a first surface on which light is incident. The composite passivation film includes a first passivation film having negative fixed charges and a protection film that protects the first passivation film. This allows the carrier collection efficiency of the photoelectric conversion element to be improved.

Abstract: A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Abstract: A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Abstract: A photoelectric conversion element includes a composite passivation film disposed on a second surface of a semiconductor substrate that is opposite to a first surface on which light is incident. The composite passivation film includes a first passivation film having negative fixed charges and a protection film that protects the first passivation film. This allows the carrier collection efficiency of the photoelectric conversion element to be improved.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film 3 placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: A concentrated solar cell has a sealing portion (12) provided on a receiver substrate (102) so as to cover a solar cell element (101) provided on the receiver substrate (102), and an optical member (13) that is provided on the sealing portion (12) and concentrates sunlight on the solar cell element (101). The optical member (13) is configured so as to include an optical refraction portion (131) having a curved face for refracting and concentrating sunlight, a concentrated light emission portion (133) that is arranged in close contact with the sealing portion (12) such that the sunlight concentrated by the optical refraction portion (131) is emitted toward the solar cell element (101), and an optical base portion (132) arranged between the optical refraction portion (131) and the concentrated light emission portion (133).

Abstract: A photovoltaic cell includes a photovoltaic cell element configured to convert sunlight into electricity, a columnar optical member including an incident surface that the sunlight enters, a side surface by which the sunlight is reflected, and an irradiation surface through which the sunlight is brought to the photovoltaic cell element, and a holder configured to hold the columnar optical member. The holder includes an abutting portion configured to face and abut the columnar optical member, and a non-abutting portion located away from the columnar optical member.

Abstract: A concentrating solar power generation unit 1 according to an embodiment of the present invention includes: a concentrating lens panel 10 in which a plurality of concentrating lenses 12 are arranged on a light transmitting panel substrate 11; a solar cell mounting plate 21 in which solar cells 20 are mounted corresponding to the concentrating lenses 12; and a first direction side supporting wall 32 that extends in a direction intersecting the solar cell mounting plate 21 and that supports a first direction side 13 of the light transmitting panel substrate 11, wherein a panel positioning portion 15 that defines the position of the concentrating lens panel 10 is formed in the first direction side 13, and a positioning portion-engagement portion 34 with which the panel positioning portion 15 is engaged is formed in an upper portion of the first direction side supporting wall 32.

Abstract: A solar cell according to one embodiment of the present invention includes a solar cell element that photoelectrically converts sunlight Ls, and a columnar optical member having an incidence surface on which sunlight Ls concentrated by a concentrating lens is incident and an irradiation surface that irradiates sunlight Ls to the solar cell element, a side surface of the columnar optical member being inclined relative to a perpendicular direction such that sunlight Ls incident from the incidence surface is reflected in a direction of the irradiation surface. In the solar cell, a minimum concentrated light beam region FLRs where a concentrated light beam region FLR formed by the concentrated sunlight Ls is minimized is configured to be located inside the columnar optical member.

Abstract: A solar cell includes a solar cell element that converts sunlight concentrated by a concentrating lens into electricity, a receiver substrate on which the solar cell element is placed, and a resin sealing portion that resin-seals the solar cell element. The solar cell further includes a reflecting member that has an irradiation window that is disposed facing the solar cell element and through which sunlight is directed to the solar cell element, a light introducing window that is formed larger than the irradiation window and disposed facing the concentrating lens and through which sunlight is introduced, and a reflecting face that is formed between the irradiation window and the light introducing window and that reflects and guides sunlight toward the solar cell element.