Abstract: To provide a resistance element having an electric resistance body with excellent stability and a method of manufacturing the same. The resistance element includes an electric resistance body, on a base body surface, consisting of a carbon nanotube structure layer 14, which configures a mesh structure in which at least plural carbon nanotubes are cross-linked to one another. The method of manufacturing the resistance element includes: an applying step of applying the base body surface 12 with a liquid solution containing carbon nanotubes having functional groups; and a cross-linking step of forming the carbon nanotube structure layer 14, used as an electric resistance body, that configures a mesh structure in which the plural carbon nanotubes are cross-linked to one another through curing of the liquid solution after application.

Abstract: To provide an active electronic device which is formed from a carbon nanotube and which excels in high frequency operation and an electronic apparatus using the active electronic device. Provided are the active electronic device including: a carbon nanotube (1); a first electrode (S) connected to one end of the carbon nanotube; a second electrode (D) connected to the other end of the carbon nanotube; and a third electrode (G) facing the carbon nanotube (1) to irradiate the carbon nanotube (1) with electromagnetic waves, in which the amount of current flowing into the carbon nanotube (1) is changed by electromagnetic waves, at least high frequency electromagnetic waves, radiated from the third electrode onto the carbon nanotube (1), and the electronic apparatus using the active electronic device.

Abstract: A photoelectric conversion element comprising a substrate and a light sensor disposed on a surface of the substrate and receiving high speed optical pulse signals and converting them into high frequency waves in which the light sensor comprises at least carbon nano-tubes, as well as a photoelectric conversion device having the element, for directly converting high speed optical pulses signals in a communication band into signals of high frequency waves or electromagnetic waves.

Abstract: There are provided an electric part which can be produced through a production process which is excellent in an industrial productivity and a method of manufacturing the electric part, by including a matrix-shaped nonconductive base member, a carbon nanotube group that is sealed within the nonconductive base member and includes one carbon nanotube or plural carbon nanotubes which are electrically connected to each other, in which substantially only end portion of the one carbon nanotube or at least one carbon nanotube contained in the plural carbon nanotubes is exposed from one surface of the nonconductive base member, and an electrode that is connected to a side surface of the at least one carbon nanotube contained in the carbon nanotube group.

Abstract: A photoelectric conversion element comprising a substrate and a light sensor disposed on a surface of the substrate and receiving high speed optical pulse signals and converting them into high frequency waves in which the light sensor comprises at least carbon nano-tubes, as well as a photoelectric conversion device having the element, for directly converting high speed optical pulses signals in a communication band into signals of high frequency waves or electromagnetic waves.

Abstract: The present invention provides an organic conductor comprising a deoxyribonucleic acid (DNA) and an electric charge-donating material bonded to the deoxyribonucleic acid, and an organic conductor comprising at least two DNAS; and an electric charge-transfer substance bonding to each base of the two DNAs.

Abstract: A transistor of nanometer size is provided, which is capable of high-speed operation and operates at room temperatures by using carbon nanotubes for semiconductor devices. The transistor uses a carbon nanotube ring having semiconductor characteristics as a semiconductor material, or a carbon nanotube ring having conductivity or semiconductor characteristics as an electrode material.

Abstract: There is provided a transistor, which includes a deoxyribonucleic acid molecule or a deoxyribonucleic acid molecule aggregate as a part of structural materials, has a source electrode member, a drain electrode member and a gate electrode member, in which at least one of three electrode members connects to the deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate.

Abstract: There is provided a transistor, which includes a deoxyribonucleic acid molecule or a deoxyribonucleic acid molecule aggregate as a part of structural materials, has a source electrode member, a drain electrode member and a gate electrode member, in which at least one of three electrode members connects to the deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate 1

Abstract: An electrical connection structure that is able to electrically connect wiring to a biopolymer, a production method of the electrical connection structure, and an electric wiring method which is able to perform wiring on a nanometer-scale. A first aspect of the production method of the present invention uses a carbon nanotube as an electrode, and makes the carbon nanotube contact the biopolymer. A second aspect of the production method applies electric current between the electrode and the biopolymer of the first aspect. The electrical connection structure of the present invention comprises at least the electrode formed by the carbon nanotube and the biopolymer, wherein the electrode is in contact with the biopolymer. In the electric wiring method of the present invention, the electrode formed by the carbon nanotube contacts the biopolymer to complete an electrical connection.

Abstract: A transistor of nanometer size is provided, which is capable of high-speed operation and operates at room temperatures by using carbon nanotubes for semiconductor devices. The transistor uses a carbon nanotube ring having semiconductor characteristics as a semiconductor material, or a carbon nanotube ring having conductivity or semiconductor characteristics as an electrode material.