Abstract: A film may be formed on a surface of a substrate by chemical vapor deposition in a reaction container provided with at least a first holding member that is capable of holding the substrate and a second holding member that is capable of holding the substrate independently from the first holding member, by: (a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member; (b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and (c) forming a film on the surface of the substrate held by the second holding member by chemical vapor deposition.

Abstract: A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Abstract: The present invention relates to a chemical vapor deposition apparatus for forming a film on a surface of a substrate(6) held in a reaction container, wherein the reaction container includes a first holding member(4) that is capable of holding the substrate(6) and a second holding member(5) that is capable of holding the substrate(6) independently from the first holding member(4), and at least one holding member among the first holding member(4) and the second holding member(5) is movable in a vertical direction.

Abstract: A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Abstract: The present invention relates to a chemical vapor deposition apparatus for forming a film on a surface of a substrate(6) held in a reaction container, wherein the reaction container includes a first holding member(4) that is capable of holding the substrate(6) and a second holding member(5) that is capable of holding the substrate(6) independently from the first holding member(4), and at least one holding member among the first holding member(4) and the second holding member(5) is movable in a vertical direction.

Abstract: A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Abstract: A back contact type solar battery which provides a reduced electric power loss, free positioning of a bus bar, and a simple manufacturing process. The solar battery includes: semiconductor substrate; first conductivity type region formed on back surface side located on the opposite side of acceptance surface side of the semiconductor substrate; second conductivity type region formed on the back surface side of the semiconductor substrate; first conductivity type collecting electrode linearly formed on the first conductivity type region; and second conductivity type collecting electrode linearly formed on the second conductivity type region. The first and second conductivity type regions are alternately arranged. Each of the first and second conductivity type collecting electrodes has discontinuous places. The discontinuous places of each conductivity type are substantially aligned on straight line in arrangement direction in which the first and second conductivity type regions are alternately arranged.

Abstract: A back contact type solar battery which provides a reduced electric power loss, free positioning of a bus bar, and a simple manufacturing process. The solar battery includes: semiconductor substrate; first conductivity type region formed on back surface side located on the opposite side of acceptance surface side of the semiconductor substrate; second conductivity type region formed on the back surface side of the semiconductor substrate; first conductivity type collecting electrode linearly formed on the first conductivity type region; and second conductivity type collecting electrode linearly formed on the second conductivity type region. The first and second conductivity type regions are alternately arranged. Each of the first and second conductivity type collecting electrodes has discontinuous places. The discontinuous places of each conductivity type are substantially aligned on straight line in arrangement direction in which the first and second conductivity type regions are alternately arranged.