Patents by Inventor Chikashi TAKEUCHI

Chikashi TAKEUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Impurity analysis device and method
    Patent number: 8932954
    Abstract: According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: January 13, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuji Yamada, Makiko Katano, Chikashi Takeuchi, Tomoyo Naito
  • Sample contamination method
    Patent number: 8771535
    Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: July 8, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuji Yamada, Makiko Katano, Ayako Mizuno, Eri Uemura, Asuka Uchinuno, Chikashi Takeuchi
  • IMPURITY ANALYSIS DEVICE AND METHOD
    Publication number: 20130244349
    Abstract: According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.
    Type: Application
    Filed: August 24, 2012
    Publication date: September 19, 2013
    Inventors: Yuji Yamada, Makiko Katano, Chikashi Takeuchi, Tomoyo Naito
  • SAMPLE CONTAMINATION METHOD
    Publication number: 20120149199
    Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.
    Type: Application
    Filed: July 22, 2011
    Publication date: June 14, 2012
    Inventors: Yuji YAMADA, Makiko KATANO, Ayako MIZUNO, Eri UEMURA, Asuka UCHINUNO, Chikashi TAKEUCHI