Patents by Inventor Chikayoshi Kamata
Chikayoshi Kamata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190280186Abstract: A magnetic memory according to an embodiment includes: an electrode including a lower face, an upper face opposed to the lower face, and a side face different from the lower and upper faces; a magnetoresistive element disposed on the upper face of the electrode, including a multilayer structure including a first magnetic layer disposed above the upper face of the electrode, a second magnetic layer disposed between the upper face of the electrode and the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a first insulating film disposed on the side face of the electrode; and a second insulating film including a first portion disposed on a side face of the multilayer structure of the magnetoresistive element, and a second portion, the first insulating film being disposed between the second portion and the side face of the electrode.Type: ApplicationFiled: August 31, 2018Publication date: September 12, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Saori KASHIWADA, Junichi ITO, Chikayoshi KAMATA, Megumi YAKABE
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Patent number: 10340311Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.Type: GrantFiled: September 6, 2017Date of Patent: July 2, 2019Assignee: Toshiba Memory CorporationInventors: Megumi Yakabe, Satoshi Seto, Chikayoshi Kamata, Saori Kashiwada, Junichi Ito
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Publication number: 20190096461Abstract: According to one embodiment, a memory device includes: a first memory element arranged above a substrate; a first contact portion adjacent to the first memory element in a first direction parallel to a surface of the substrate; a second contact portion arranged above the first memory element in a second direction perpendicular to the surface of the substrate; and a second memory element arranged above the first contact portion in the second direction. First dimensions at upper parts of the first and second memory elements are smaller than second dimensions at lower parts of the first and second memory elements, and third dimensions at upper parts of the first and second contact portions are larger than fourth dimensions at lower parts of the first and second contact portions.Type: ApplicationFiled: March 9, 2018Publication date: March 28, 2019Applicant: Toshiba Memory CorporationInventors: Masahiro Koike, Shogo Itai, Tadaomi Daibou, Chikayoshi Kamata, Junichi Ito, Masahiko Nakayama
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Patent number: 10103198Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.Type: GrantFiled: March 7, 2016Date of Patent: October 16, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Saori Kashiwada, Yuichi Ohsawa, Daisuke Saida, Chikayoshi Kamata, Kazutaka Ikegami, Megumi Yakabe, Hiroaki Maekawa
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Publication number: 20180138237Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.Type: ApplicationFiled: September 6, 2017Publication date: May 17, 2018Applicant: Toshiba Memory CorporationInventors: Megumi YAKABE, Satoshi SETO, Chikayoshi KAMATA, Saori KASHIWADA, Junichi ITO
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Patent number: 9935260Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer, a third magnetic layer, and a first non-magnetic layer. The third magnetic layer is provided between a first part of the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the third magnetic layer. The first magnetic layer further includes a second part. At least a portion of the second part overlaps at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer.Type: GrantFiled: September 14, 2016Date of Patent: April 3, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Daisuke Saida, Shogo Itai, Chikayoshi Kamata
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Patent number: 9799482Abstract: A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.Type: GrantFiled: March 11, 2016Date of Patent: October 24, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yuichi Ohsawa, Akio Ui, Junichi Ito, Chikayoshi Kamata, Megumi Yakabe, Saori Kashiwada
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Publication number: 20170279037Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer, a third magnetic layer, and a first non-magnetic layer. The third magnetic layer is provided between a first part of the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the third magnetic layer. The first magnetic layer further includes a second part. At least a portion of the second part overlaps at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer.Type: ApplicationFiled: September 14, 2016Publication date: September 28, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Daisuke SAIDA, Shogo ITAI, Chikayoshi KAMATA
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Publication number: 20160380189Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.Type: ApplicationFiled: September 13, 2016Publication date: December 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Junichi Ito, Saori Kashiwada, Chikayoshi Kamata, Naoki Tamaoki
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Publication number: 20160359107Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less.Type: ApplicationFiled: August 18, 2016Publication date: December 8, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuichi OHSAWA, Junichi ITO, Shigeki TAKAHASHI, Saori KASHIWADA, Chikayoshi KAMATA
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Publication number: 20160268338Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.Type: ApplicationFiled: March 7, 2016Publication date: September 15, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Saori KASHIWADA, Yuichi Ohsawa, Daisuke Saida, Chikayoshi Kamata, Kazutaka Ikegami, Megumi Yakabe, Hiroaki Maekawa
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Publication number: 20160196951Abstract: According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuichi OHSAWA, Akio UI, Junichi ITO, Chikayoshi KAMATA, Megumi YAKABE, Saori KASHIWADA
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Publication number: 20160197268Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Megumi YAKABE, Yuichi OHSAWA, Chikayoshi KAMATA, Saori KASHIWADA, Junichi ITO, Eiji KITAGAWA
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Patent number: 9299918Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.Type: GrantFiled: October 1, 2014Date of Patent: March 29, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Minoru Amano, Daisuke Saida, Junichi Ito, Yuichi Ohsawa, Chikayoshi Kamata, Saori Kashiwada, Hiroaki Yoda
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Patent number: 9224944Abstract: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.Type: GrantFiled: March 24, 2014Date of Patent: December 29, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Takahashi, Yuichi Ohsawa, Junichi Ito, Chikayoshi Kamata, Saori Kashiwada, Minoru Amano, Hiroaki Yoda
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Patent number: 9117995Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.Type: GrantFiled: September 11, 2013Date of Patent: August 25, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Megumi Yakabe
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Patent number: 9117924Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.Type: GrantFiled: December 28, 2012Date of Patent: August 25, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Tadaomi Daibou
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Patent number: 8994131Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.Type: GrantFiled: March 15, 2013Date of Patent: March 31, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Naoharu Shimomura, Eiji Kitagawa, Chikayoshi Kamata, Minoru Amano, Yuichi Ohsawa, Daisuke Saida, Megumi Yakabe, Hiroaki Maekawa
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Publication number: 20150014756Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.Type: ApplicationFiled: October 1, 2014Publication date: January 15, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi DAIBOU, Minoru AMANO, Daisuke SAIDA, Junichi ITO, Yuichi OHSAWA, Chikayoshi KAMATA, Saori KASHIWADA, Hiroaki YODA
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Patent number: 8878317Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.Type: GrantFiled: August 16, 2011Date of Patent: November 4, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tadaomi Daibou, Minoru Amano, Daisuke Saida, Junichi Ito, Yuichi Ohsawa, Chikayoshi Kamata, Saori Kashiwada, Hiroaki Yoda