Abstract: Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.

Abstract: Methods and apparatus for automatically determining a feedback setpoint for use in operating an atomic force microscope (AFM) are provided. The setpoint may be determined by modulating a feedback setpoint while monitoring for a change in a detector signal. In an effort to avoid tip damage and remain in non-contact, attractive mode during use, a setpoint just above a setpoint corresponding to a detected change in a parameter of the detector signal, such as an abrupt change in phase, may be used to operate the AFM.

Abstract: Methods and apparatus for automatically determining a feedback setpoint for use in operating an atomic force microscope (AFM) are provided. The setpoint may be determined by modulating a feedback setpoint while monitoring for a change in a detector signal. In an effort to avoid tip damage and remain in non-contact, attractive mode during use, a setpoint just above a setpoint corresponding to a detected change in a parameter of the detector signal, such as an abrupt change in phase, may be used to operate the AFM.