Abstract: In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer.

Abstract: A method for manufacturing a light-emitting diode is described, comprising the following steps. A substrate is provided. An illuminant epitaxial structure is formed on the substrate, wherein the illuminant epitaxial structure comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked on the substrate in sequence, a surface of the second conductivity type semiconductor layer includes at least one epitaxial defect formed therein, and the first conductivity type semiconductor layer and the second conductivity type semiconductor layer are opposite conductivity types. Then, an insulation layer is formed to fill into the epitaxial defect in the second conductivity type semiconductor layer. A transparent electrode layer is formed on the surface of the second conductivity type semiconductor layer.