Patents by Inventor Chimin Hu

Chimin Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate
    Patent number: 6482688
    Abstract: A method of forming a generally T-shaped structure. The method comprises forming a poly/amorphous silicon layer stack which comprises a polysilicon layer and a generally amorphous silicon layer overlying the polysilicon layer. The method further comprises selectively etching the poly/amorphous silicon layer stack, wherein an etch rate associated with the generally amorphous silicon layer in an over etch step associated therewith is less than an etch rate associated with the polysilicon layer, thereby causing a lateral portion of the generally amorphous silicon layer to extend beyond a corresponding lateral portion of the polysilicon layer.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: November 19, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Chimin Hu, Amitabh Jain, Reima Tapani Laaksonen, Manoj Mehrotra
  • Utilizing amorphorization of polycrystalline structures to achieve t-shaped mosfet gate
    Publication number: 20020142530
    Abstract: The present invention relates to a method of forming a generally T-shaped structure. The method comprises forming a poly/amorphous silicon layer stack which comprises a polysilicon layer and a generally amorphous silicon layer overlying the polysilicon layer. The method further comprises selectively etching the poly/amorphous silicon layer stack, wherein an etch rate associated with the generally amorphous silicon layer in an over etch step associated therewith is less than an etch rate associated with the polysilicon layer, thereby causing a lateral portion of the generally amorphous silicon layer to extend beyond a corresponding lateral portion of the polysilicon layer.
    Type: Application
    Filed: March 30, 2001
    Publication date: October 3, 2002
    Inventors: Chimin Hu, Amitabh Jain, Reima Tapani Laaksonen, Manoj Mehrotra