Abstract: An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.

Abstract: A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.

Abstract: A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.

Abstract: A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels.

Abstract: Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.

Abstract: Electroless plating systems and methods are described herein.

Abstract: A nozzle assembly is connected to a pipe and includes an insertion port in which a resilient filtering member is inserted. Teeth are defined in an inner periphery of the insertion port and a diameter of the resilient filtering member is slightly larger than an inner diameter of the insertion port. The teeth press inward an outer surface of the resilient filtering member so as to position the filtering member in the insertion port.

Abstract: In one embodiment, the present invention includes a method for depositing a barrier layer on a substrate having a trench, depositing a liner layer on the barrier layer that includes a surface oxide, electrolessly depositing a copper seed layer on the liner layer, where the surface oxide is reduced in-situ in an electroless bath, depositing a bulk metal layer on the copper seed layer. Other embodiments are described and claimed.

Abstract: An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.

Abstract: In one embodiment, the present invention includes a method for depositing a barrier layer on a substrate having a trench, depositing a liner layer on the barrier layer that includes a surface oxide, electrolessly depositing a copper seed layer on the liner layer, where the surface oxide is reduced in-situ in an electroless bath, depositing a bulk metal layer on the copper seed layer. Other embodiments are described and claimed.

Abstract: A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels.

Abstract: A surface cooling device includes a cover fixed to a surface and a pipe is engaged with a groove an underside of the cover. A plurality of nozzles are rotatably connected to the pipe and located in outlets defined through the cover. The nozzles spray water particles to the air to cool the surface such as a road.

Abstract: A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels.

Abstract: A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.

Abstract: A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.

Abstract: A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.

Abstract: Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.

Abstract: A method of depositing a metal cladding on conductors in a damascene process is described. The potential between, for instance, cobalt ions in electroless solution and the surface of an ILD between the conductors is adjusted so as to repel the metal from the ILD.

Abstract: A method of forming a metal interconnect for an integrated circuit comprises providing a substrate that includes a trench formed in a dielectric layer, employing a first dry thermal process to deposit a barrier layer onto the dielectric layer and within the trench, employing a second dry thermal process to deposit a catalytic activation film on the barrier layer, employing a wet chemistry plating process to deposit at least one metal layer on the catalytic activation film to fill the trench, and planarizing the deposited metal layer to form an interconnect. The first and second dry thermal processes may be vapor deposition processes performed in sequence within a reaction chamber under vacuum, where the vacuum is not broken between processes. The wet chemistry plating process may be an electroless plating process or a combination of an electroless plating process and an electroplating process.

Abstract: An etch stopless interconnect structure. According to embodiments of the present invention, a via opening is formed in an interlayer dielectric over a metal layer to expose a portion of the metal layer. The opening is then partially filled with a gap fill material. The opening is then filled with a sacrificial material wherein the sacrificial material is formed on the gap fill material. A trench is then formed in the interlayer dielectric including a portion of the opening filled with the sacrificial material. The sacrificial material is then removed from the opening. The trench and opening are then filled with a conductive film.