Abstract: In some examples, a device can include a first antenna having a first wireless connection with a first computing device, a second antenna having a second wireless connection with a second computing device, and a controller to determine a signal strength of the first wireless connection and a signal strength of the second wireless connection, designate, in response to the signal strength of the first wireless connection being greater than a threshold signal strength, the first wireless connection as an active connection and the second wireless connection as a standby connection, and cause the peripheral device to communicate with the first computing device via the active connection of the first antenna while maintaining the second wireless connection to the second computing device via the second antenna, where the second wireless connection remains as the standby connection.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)4-x to allow the silica moiety to carry a photo-polymerizable unsaturated group; adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9 and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4?x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.