Patents by Inventor Chin-Chang Pai

Chin-Chang Pai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10103187
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: October 16, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Qingfei Chen, Qingwei Shan, Chin-Chang Pai
  • Patent number: 9819883
    Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: November 14, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Zhiyong Zhan, Qingfei Chen, Chin-Chang Pai
  • Publication number: 20170180662
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.
    Type: Application
    Filed: December 17, 2015
    Publication date: June 22, 2017
    Inventors: Qingfei Chen, Qingwei Shan, Chin-Chang Pai
  • Publication number: 20170163912
    Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.
    Type: Application
    Filed: December 3, 2015
    Publication date: June 8, 2017
    Inventors: Zhiyong Zhan, Qingfei Chen, Chin-Chang Pai