Abstract: Some embodiments relate to a semiconductor structure. The semiconductor structure includes a first substrate including a first plurality of conductive pads that are laterally spaced apart from one another on the first substrate. A first plurality of conductive bumps are disposed on the first plurality of conductive pads, respectively. A multi-tiered solder-resist structure is disposed on the first substrate and arranged between the first plurality of conductive pads. The multi-tiered solder-resist structure has different widths at a different heights over the first substrate and contacts sidewalls of the first plurality of conductive bumps to separate the first plurality of conductive bumps from one another.

Abstract: A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

Abstract: A method for forming a chip package structure. The method includes bonding first connectors over a front surface of a semiconductor wafer. The method also includes dicing the semiconductor wafer from a rear surface of the semiconductor wafer to form semiconductor dies and mounting first and second semiconductor dies in the semiconductor dies over a top surface of the interposer substrate. The method further forming an encapsulating layer over the top surface of the interposer substrate to cover the first semiconductor die and the second semiconductor die. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die, and upper portions of the first sidewall and the second sidewall have a tapered contour, to define a top die-to-die distance and a bottom die-to-die distance that is less than the top die-to-die distance.

Abstract: A method of manufacturing an LED light bar comprises: providing a reflow oven and a clamping device mounted on a transmitting belt of the reflow oven, the reflow oven comprising a heating area and a cooling area; providing a semi-finished LED light bar comprising a printed circuit board and a plurality of LEDs arranged on the print circuit board with solder paste applied between the LEDs and the printed circuit board, and mounting the semi-finished LED light bar in the clamping device; and starting the reflow oven and thus the transmitting belt carrying the clamping device and the semi-finished LED light bar moving together to pass through the reflow oven, whereby the solder paste is firstly melted in the heating area and then solidified in the cooling area to fix the LEDs on the printed circuit board to form the LED light bar.