Abstract: A spark plug device includes a structure for modification of an arc, the modification including arc rotation. The spark plug can be used in a combustion engine to reduce emissions and/or improve fuel economy. A method for operating a spark plug and a combustion engine having the spark plug device includes the step of modifying an arc, the modifying including rotating the arc.

Abstract: Boron powders are sintered and densified utilizing a microwave environment for so doing.

Abstract: Boron powders are sintered and densified utilizing a microwave environment for so doing.

Abstract: A spark plug device includes a structure for modification of an arc, the modification including arc rotation. The spark plug can be used in a combustion engine to reduce emissions and/or improve fuel economy. A method for operating a spark plug and a combustion engine having the spark plug device includes the step of modifying an arc, the modifying including rotating the arc.

Abstract: Boron powders are sintered and densified utilizing a microwave environment for so doing.

Abstract: In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.

Abstract: A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.