Patents by Inventor Chin-Chia Yang

Chin-Chia Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200395413
    Abstract: A memory cell includes a first conductive line, a lower electrode, a carbon nano-tube (CNT) layer, a middle electrode, a resistive layer, a top electrode and a second conductive line. The first conductive line is disposed over a substrate. The lower electrode is disposed over the first conductive line. The carbon nano-tube (CNT) layer is disposed over the lower electrode. The middle electrode is disposed over the carbon nano-tube layer, thereby the lower electrode, the carbon nano-tube (CNT) layer and the middle electrode constituting a nanotube memory part . The resistive layer is disposed over the middle electrode. The top electrode is disposed over the resistive layer, thereby the middle electrode, the resistive layer and the top electrode constituting a resistive memory part. The second conductive line is disposed over the top electrode.
    Type: Application
    Filed: July 17, 2019
    Publication date: December 17, 2020
    Inventors: Da-Jun Lin, Bin-Siang Tsai, Ya-Jyuan Hung, Chin-Chia Yang, Ting-An Chien
  • Publication number: 20200185629
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.
    Type: Application
    Filed: January 8, 2019
    Publication date: June 11, 2020
    Inventors: Da-Jun Lin, Bin-Siang Tsai, Chin-Chia Yang