Patents by Inventor Chin-Chih Yu
Chin-Chih Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240065765Abstract: A method of orthopedic treatment includes steps of: by using a computer aided design (CAD) tool based on profile data that is related to a to-be-treated part of a bone of a patient, obtaining a model of a preliminary instrument that substantially fits the to-be-treated part; by using the CAD tool, obtaining a model of a patient specific instrument (PSI) based on the model of the preliminary instrument; producing the PSI based on the model of the PSI, the PSI being adjustable; performing medical operation on the to-be-treated part, and then attaching the PSI to the to-be-treated part; after attaching the PSI to the to-be-treated part, adjusting the PSI such that the PSI is adapted to real conditions of the to-be-treated part.Type: ApplicationFiled: August 22, 2023Publication date: February 29, 2024Inventors: Alvin Chao-Yu CHEN, Yi-Sheng CHAN, Chi-Pin HSU, Shang-Chih LIN, Chin-Ju WU, Jeng-Ywan JENG
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Patent number: 8222095Abstract: A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.Type: GrantFiled: October 27, 2008Date of Patent: July 17, 2012Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corporation, Hannstar Display Corporation, Chi Mei Optoelectronics Corporation, Industrial Technology Research InstituteInventors: Fang-Chen Luo, Shuo-Wei Liang, Shin-Chuan Chiang, Chao-Nan Chen, Chin-Chih Yu
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Patent number: 8106389Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.Type: GrantFiled: October 28, 2009Date of Patent: January 31, 2012Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corporation, Hannstar Display Corporation, Chi Mei Optoelectronics Corporation, Industrial Technology Research Institute, TPO Displays Corp.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Patent number: 7745267Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.Type: GrantFiled: December 22, 2006Date of Patent: June 29, 2010Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corporation, Hannstar Display Corporation, Chi Mei Optoelectronics Corporation, Industrial Technology Research Institute, TPO Dispalys Corp.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Publication number: 20100044696Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.Type: ApplicationFiled: October 28, 2009Publication date: February 25, 2010Applicants: TAIWAN TFT LCD ASSOCIATION, CHUNGHWA PICTURE TUBES, LTD., AU OPTRONICS CORPORATION, HANNSTAR DISPLAY CORPORATION, CHI MEI OPTOELECTRONICS CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TPO DISPLAYS CORP.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Publication number: 20090305473Abstract: A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.Type: ApplicationFiled: October 27, 2008Publication date: December 10, 2009Applicants: TAIWAN TFT LCD ASSOCIATION, CHUNGHWA PICTURE TUBES, LTD., AU OPTRONICS CORPORATION, HANNSTAR DISPLAY CORPORATION, CHI MEI OPTOELECTRONICS CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Fang-Chen Luo, Shuo-Wei Liang, Shin-Chuan Chiang, Chao-Nan Chen, Chin-Chih Yu
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Publication number: 20080057631Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.Type: ApplicationFiled: December 22, 2006Publication date: March 6, 2008Applicants: TAIWAN TFT LCD ASSOCIATION, CHUNGHWA PICTURE TUBES, LTD., AU OPTRONICS CORPORATION, HANNSTAR DISPLAY CORPORATION, CHI MEI OPTOELECTRONICS CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TPO DISPLAYS CORP.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang