Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: A three dimensional Integrated Circuit (IC) Power Grid (PG) may be provided. The three dimensional IC PG may comprise a first IC die, a second IC die, an interface, and a power distribution structure. The interface may be disposed between the first IC die and the second IC die. The power distribution structure may be connected to the interface. The power distribution structure may comprise at least one Through-Silicon Vias (TSV) and a ladder structure connected to at least one TSV.

Abstract: A cell region of a semiconductor device, the cell region including: components (representing a first circuit) including alpha info conductors and dummy conductors which are substantially collinear correspondingly with reference tracks, regarding the first circuit, the alpha info conductors beipng correspondingly for one or more input and/or output signals, or one or more internal signals, and for a majority of the reference tracks, first ends correspondingly of the alpha info conductors or the dummy conductors being aligned and proximal to a first side of the cell region; a first alpha info conductor being on a first reference track and being an intra-cell conductor which does not extend beyond the first side nor a second side of the cell region; and a portion of a first beta info conductor of a second circuit (represented by components of an external cell region) being on the first reference track.

Abstract: The present disclosure provides a method and a system for determining the equivalence of the DRM data set and the DRC data set. The system retrieves a DRM data set and a DRC data set, and transforms the DRM data set and the DRC data set into a first data structure node and a second data structure node respectively. The system determines whether the first data structure node and the second data structure node are equivalent according to a data structure node comparison model.

Abstract: The present disclosure provides a method and a system for determining the equivalence of the DRM data set and the DRC data set. The system retrieves a DRM data set and a DRC data set, and transforms the DRM data set and the DRC data set into a first data structure node and a second data structure node respectively. The system determines whether the first data structure node and the second data structure node are equivalent according to a data structure node comparison model.

Abstract: A method (of generating a layout diagram of a wire routing arrangement in a multi-patterning context having multiple masks, the layout diagram being stored on a non-transitory computer-readable medium) includes: placing, relative to a given one of the masks, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining whether the first candidate location results in a group of cut patterns which violates a design rule; and temporarily preventing placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.

Abstract: A system (for generating a layout diagram of a wire routing arrangement) includes a processor and memory including computer program code for one or more programs, the system generating the layout diagram including: placing, relative to a given one of masks in a multi-patterning context, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining that the first candidate location results in an intra-row non-circular group of a given row which violates a design rule, the intra-row non-circular group including first and second cut patterns which abut a same boundary of the given row, and a total number of cut patterns in the being an even number; and temporarily preventing placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.

Abstract: A layout design methodology is provided for a device that includes two or more identical structures. Each device can have a first die, a second die stacked over the first die and a third die stacked over the second die. The second die can include a first through-silicon via (TSV) and a first circuit, and the third die can include a second TSV and a second circuit. The first TSV and the second TSV can be linearly coextensive. The first and second circuit can each be a logic circuit having a comparator and counter used to generate die identifiers. The counters of respective device die can be connected in series between the dice. Each die can be manufactured using the same masks but retain unique logical identifiers. A given die in a stack of dice can thereby be addressed by a single path in a same die layout.

Abstract: The present disclosure describes heat dissipating structures that can be formed either in functional or non-functional areas of three-dimensional system on integrated chip structures. In some embodiments, the heat dissipating structures maintain an average operating temperature of memory dies or chips below about 90° C. For example, a structure includes a stack with chip layers, where each chip layer includes one or more chips and an edge portion. The structure further includes a thermal interface material disposed on the edge portion of each chip layer, a thermal interface material layer disposed over a top chip layer of the stack, and a heat sink over the thermal interface material layer.

Abstract: A system for generating a layout diagram of a wire routing arrangement in a multi-patterning context having multiple masks (the layout diagram being stored on a non-transitory computer-readable medium), at least one processor, at least one memory and computer program code (for one or more programs) of the system being configured to cause the system to execute generating the layout diagram including: placing, relative to a given one of the masks, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining whether the first candidate location results in at least one of a non-circular group or a cyclic group which violates a design rule; and temporarily preventing placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.

Abstract: A method (of generating a layout diagram of a wire routing arrangement in a multi-patterning context having multiple masks, the layout diagram being stored on a non-transitory computer-readable medium) includes: placing, relative to a given one of the masks, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining whether the first candidate location results in at least one of a non-circular group or a cyclic group which violates a design rule; and temporarily preventing, if there is a violation, placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.

Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, a first through substrate via, and an under bump metallurgy (UBM) layer. The first semiconductor wafer has a first side of the first semiconductor wafer. The second semiconductor wafer is coupled to the first semiconductor wafer, and is over the first semiconductor wafer. The second semiconductor wafer has a first device in a first side of the second semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer opposite from the first side of the first semiconductor wafer. The first interconnect structure includes an inductor below the first semiconductor wafer. The first through substrate via extends through the first semiconductor wafer. The first through substrate via electrically couples the inductor to at least the first device. The UBM layer is on a surface of the first interconnect structure.

Abstract: A layout design methodology is provided for a device that includes two or more identical structures. Each device can have a first die, a second die stacked over the first die and a third die stacked over the second die. The second die can include a first through-silicon via (TSV) and a first circuit, and the third die can include a second TSV and a second circuit. The first TSV and the second TSV can be linearly coextensive. The first and second circuit can each be a logic circuit having a comparator and counter used to generate die identifiers. The counters of respective device die can be connected in series between the dice. Each die can be manufactured using the same masks but retain unique logical identifiers. A given die in a stack of dice can thereby be addressed by a single path in a same die layout.

Abstract: The present disclosure describes heat dissipating structures that can be formed either in functional or non-functional areas of three-dimensional system on integrated chip structures. In some embodiments, the heat dissipating structures maintain an average operating temperature of memory dies or chips below about 90° C. For example, a structure includes a stack with chip layers, where each chip layer includes one or more chips and an edge portion. The structure further includes a thermal interface material disposed on the edge portion of each chip layer, a thermal interface material layer disposed over a top chip layer of the stack, and a heat sink over the thermal interface material layer.

Abstract: A semiconductor device including a cell region which includes components representing a circuit arranged such that a rectangular virtual perimeter is drawable around substantially all of the components and includes first and second virtual side boundaries, the components including: a first conductor which is an intra-cell conductor of a first signal that is internal to the circuit, a first end of the intra-cell conductor being substantially a minimum virtual boundary offset inside the first virtual side boundary; and a second conductor of a second signal of the circuit; a portion of the second conductor having a first end which extends outside the first virtual side boundary by a protrusion length substantially greater than the minimum virtual boundary offset; and a second end of the second conductor being receded inside the second virtual side boundary by a first gap substantially greater than the minimum virtual boundary offset.

Abstract: The present disclosure relates to a semiconductor module. The semiconductor module includes an excitable element located on a first side of a substrate. A first ground structure is disposed between the first side of the substrate and the excitable element. The first ground structure includes a conductive via extending through the substrate and an interconnect disposed over a topmost surface of the conductive via facing away from the substrate. A second ground structure is located on a second side of the substrate, opposing the first side, and electrically coupled to the first ground structure.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor interposer device. The semiconductor interposer device includes a substrate and a first metallization layer formed on the substrate. A first dielectric layer is formed on the first metallization layer and a second metallization layer is formed on the substrate. A first conducting line is formed in the first metallization layer and second and third conducting lines are formed in the second metallization layer. A metal-insulator-metal (MIM) capacitor is formed in the first dielectric layer and over the first conducting line.