Abstract: A memory comprising a memory array, including a plurality of blocks, and control circuits comprising logic to execute operations is provided. The operations include decoding a read setup burst command identifying (i) an address of a first read setup block in a set of read setup blocks and (ii) a number of read setup blocks, as candidates for read setup operations. The operations further including, in response to the decoding of the read setup burst command, performing a read setup burst operation on a plurality of read setup blocks of the set of read setup blocks.

Abstract: A storage device includes a memory array and a memory controller. The memory controller generates read and write commands for the memory array. An error correction code engine for the storage device is operable to use a plurality of different codeword sizes, different code rates, or different ECC algorithms. Logic is included that applies a selected codeword size, code rate or ECC algorithm in dependence on the operating conditions of the memory array.

Abstract: A method for sensing temperature in memory die, memory die and memory with temperature sensing function are provides. The memory die includes at least one temperature monitoring for outputting a temperature status in the memory die; a temperature sensor, arranged in the memory die for sensing an operation temperature in the memory die; and a control logic unit, coupled to the temperature sensor for receiving the operation temperature and coupled to the temperature monitoring pin. The control logic unit compares the operation temperature and a threshold value received from outside of the memory die to generate a comparison result, and outputs the temperature status through the temperature monitoring according to the comparison result.

Abstract: A storage device includes a memory array and a memory controller. The memory controller generates read and write commands for the memory array. An error correction code engine for the storage device is operable to use a plurality of different codeword sizes, different code rates, or different ECC algorithms. Logic is included that applies a selected codeword size, code rate or ECC algorithm in dependence on the operating conditions of the memory array.

Abstract: A memory comprising a memory array, including a plurality of blocks, and control circuits comprising logic to execute operations is provided. The operations include decoding a read setup burst command identifying (i) an address of a first read setup block in a set of read setup blocks and (ii) a number of read setup blocks, as candidates for read setup operations. The operations further including, in response to the decoding of the read setup burst command, performing a read setup burst operation on a plurality of read setup blocks of the set of read setup blocks.

Abstract: A method for sensing temperature in memory die, memory die and memory with temperature sensing function are provides. The memory die includes at least one temperature monitoring for outputting a temperature status in the memory die; a temperature sensor, arranged in the memory die for sensing an operation temperature in the memory die; and a control logic unit, coupled to the temperature sensor for receiving the operation temperature and coupled to the temperature monitoring pin. The control logic unit compares the operation temperature and a threshold value received from outside of the memory die to generate a comparison result, and outputs the temperature status through the temperature monitoring according to the comparison result.

Abstract: A method of operating a memory is provided. The method includes, in response to an access of a block of memory updating a first queue to identify the accessed block in response to a determination that the block is not already identified in the first queue and a determination that the block is not already identified in a second queue, and updating the second queue to identify the accessed block of memory in response to a determination that the block is already identified in the first queue. The method further includes scanning the second queue to identify, as a read setup candidate, each block of the memory that is identified as present in the second queue longer than a threshold, and performing a read setup operation on a block of memory that has been identified as the read setup candidate.