Patents by Inventor Chin Foong TONG

Chin Foong TONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic circuit including a switch having an associated breakdown voltage and a method of using the same
    Patent number: 9413348
    Abstract: An electronic device can include a switch coupled to a switching node. In an embodiment, the switch has a breakdown voltage is less than 2.0 times the designed operating voltage. In another embodiment, the electronic device can further include another switch, wherein both switches are coupled to each other at a switching node. The switches can have different breakdown voltages. In a particular embodiment, either or both switches can include a field-effect transistor and a zener diode that are connected in parallel. The zener diode can be designed to breakdown at a relatively lower fraction of the designed operating voltage as compared to a conventional device. Embodiments can be used to reduce voltage overshoot and ringing at the switching node that may occur after changing the states of the first and second switches. Processes of forming the electronic device can be implemented without significant complexity.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: August 9, 2016
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jaume Roig-Guitart, Filip Bauwens, Chin Foong Tong
  • Electronic Circuit Including A Switch Having An Associated Breakdown Voltage And A Method Of Using The Same
    Publication number: 20160036431
    Abstract: An electronic device can include a switch coupled to a switching node. In an embodiment, the switch has a breakdown voltage is less than 2.0 times the designed operating voltage. In another embodiment, the electronic device can further include another switch, wherein both switches are coupled to each other at a switching node. The switches can have different breakdown voltages. In a particular embodiment, either or both switches can include a field-effect transistor and a zener diode that are connected in parallel. The zener diode can be designed to breakdown at a relatively lower fraction of the designed operating voltage as compared to a conventional device. Embodiments can be used to reduce voltage overshoot and ringing at the switching node that may occur after changing the states of the first and second switches. Processes of forming the electronic device can be implemented without significant complexity.
    Type: Application
    Filed: December 19, 2014
    Publication date: February 4, 2016
    Inventors: Jaume ROIG-GUITART, Filip BAUWENS, Chin Foong TONG