Abstract: An integrated circuit includes a comparator circuit that generates a control signal based on a comparison between a threshold voltage and a supply voltage. The integrated circuit also includes a clock signal generation circuit that generates a clock signal and that receives the control signal. The clock signal generation circuit decreases a frequency of the clock signal to a reduced frequency in response to the control signal indicating that the supply voltage has decreased below the threshold voltage. The integrated circuit also includes a secure device manager circuit that has a timing circuit. The clock signal is provided to a clock input of the timing circuit. The timing circuit receives supply current from the supply voltage. The secure device manager circuit performs a security function for the integrated circuit using the timing circuit in response to the clock signal with the reduced frequency.

Abstract: An integrated circuit includes a comparator circuit that generates a control signal based on a comparison between a threshold voltage and a supply voltage. The integrated circuit also includes a clock signal generation circuit that generates a clock signal and that receives the control signal. The clock signal generation circuit decreases a frequency of the clock signal to a reduced frequency in response to the control signal indicating that the supply voltage has decreased below the threshold voltage. The integrated circuit also includes a secure device manager circuit that has a timing circuit. The clock signal is provided to a clock input of the timing circuit. The timing circuit receives supply current from the supply voltage. The secure device manager circuit performs a security function for the integrated circuit using the timing circuit in response to the clock signal with the reduced frequency.

Abstract: Integrated circuits with memory cells are provided. The memory cells may be arranged in rows and columns. Each column of memory cells may be coupled to a respective pair of data lines. The data lines may be precharged using precharge circuitry. The precharge circuitry may include n-channel precharge transistors, an equalizer transistor, an isolation transistor, a pull-down transistor, a voltage booster, and control logic. The voltage booster may provide boosted voltage signal for overdriving the n-channel transistors by pulsing a control signal. During first pulse of the control signal, the data lines may be charged up to an intermediate voltage level. During second pulse of the control signal, the data lines may be charged up to a positive power supply voltage level that is greater than the intermediate voltage level. Performing double boosted data line precharge in this way can help reduce leakage and improve memory performance.

Abstract: An integrated circuit system may include a first integrated circuit (IC), a second IC, and interface circuitry. The first IC is operable to output a parallel data stream at a first data rate. The second IC is operable to output a serialized data stream at a second date rate. The second data rate may be different than the first data rate. The interface circuitry may be coupled between the first integrated circuit and the second integrated circuit. The interface circuitry may be operable to convert the parallel data stream received from the first IC into a serialized data stream with the second data rate. The interface circuitry may be also operable to convert the serialized data stream received from the second IC to a parallel data stream with the first data rate.

Abstract: Circuits and techniques for operating a memory circuit are disclosed. A disclosed circuit includes a memory circuit and a sleep circuit with an output terminal coupled to the memory circuit. The sleep circuit is operable to receive a control signal and further operable to place the memory circuit in different modes of operation. The memory circuit may be placed in either a first mode of operation, a second mode of operation or a third mode of operation based at least partly on the control signal. An input terminal of the sleep circuit is coupled to an output terminal of the control circuit. The control circuit is operable to receive an enable signal and is operable to supply the control signal to the sleep circuit at first, second and third voltage levels during the first, second and third modes of operation, respectively, based on the enable signal and a clock signal.

Abstract: Systems and methods for improving efficiency of a voltage booster for read mode operations of memory cells and discharging a boosted supply voltage safely are disclosed. The system contains a plurality of boosting stages coupled in series including a plurality of boosting capacitors, a plurality of isolators. The isolator can be used to prevent boosting of one capacitor from negatively affecting a charge of the other adjacent capacitor to improve the efficiency of the voltage booster. A voltage booster circuit can accurately boost a supply voltage with a suitable number of boosting stages depending on a level of the supply voltage being provided. Since boosters contain a suitable number of boosting stages, the boosters can discharge a boosted voltage sequentially. With this sequential discharge method, memory cells can not have a hot switching problem.

Abstract: Systems and methods for producing a boosted voltage which can be used as a boosted word line voltage for read mode operations of memory cells are disclosed. The system contains a VCC comparator, a look up table, and a boosting circuit including a set of boosting capacitors. The look up table has a list of trim codes that indicates desired boosting ratios. The boosting ratio can vary depending on a level of a supply voltage to provide a sufficient word line voltage, thereby preventing and/or mitigating delay in reading operations. The number of the capacitors in the boosting circuit can be predetermined to be turned on or off according to the trim code. Accordingly, the voltage boost circuit provides a sufficient boosted word line voltage to a core cell gate with flexibility despite fluctuation of the supply voltage level.

Abstract: Systems and methods for improving efficiency of a voltage booster for read mode operations of memory cells and discharging a boosted supply voltage safely are disclosed. The system contains a plurality of boosting stages coupled in series including a plurality of boosting capacitors, a plurality of isolators. The isolator can be used to prevent boosting of one capacitor from negatively affecting a charge of the other adjacent capacitor to improve the efficiency of the voltage booster. A voltage booster circuit can accurately boost a supply voltage with a suitable number of boosting stages depending on a level of the supply voltage being provided. Since boosters contain a suitable number of boosting stages, the boosters can discharge a boosted voltage sequentially. With this sequential discharge method, memory cells can not have a hot switching problem.

Abstract: Systems and/or methods that facilitate accessing data in a memory are presented. The memory can be flash memory that includes a plurality of sectors in an array that can be associated with a decoder component that includes a regulator component, which facilitates performing read operations within a desired period of time. Each sector can be associated with a decoder subcomponent and associated regulator subcomponent. Parasitic resistance and capacitance elements can increase the further in distance a sector and associated decoder component are from a booster component, which is utilized to increase the voltage at a boost-strap node within each decoder subcomponent to facilitate performing read operations. To counter the parasitic elements, each regulator subcomponent can include one or more capacitors, where the number of capacitors and total capacitance value can be determined based on the distance the associated decoder subcomponent is from the booster component.

Abstract: Systems and methods for producing a boosted voltage which can be used as a boosted word line voltage for read mode operations of memory cells are disclosed. The system contains a VCC comparator, a look up table, and a boosting circuit including a set of boosting capacitors. The look up table has a list of trim codes that indicates desired boosting ratios. The boosting ratio can vary depending on a level of a supply voltage to provide a sufficient word line voltage, thereby preventing and/or mitigating delay in reading operations. The number of the capacitors in the boosting circuit can be predetermined to be turned on or off according to the trim code. Accordingly, the voltage boost circuit provides a sufficient boosted word line voltage to a core cell gate with flexibility despite fluctuation of the supply voltage level.

Abstract: Systems and/or methods that facilitate accessing data in a memory are presented. The memory can be flash memory that includes a plurality of sectors in an array that can be associated with a decoder component that includes a regulator component, which facilitates performing read operations within a desired period of time. Each sector can be associated with a decoder subcomponent and associated regulator subcomponent. Parasitic resistance and capacitance elements can increase the further in distance a sector and associated decoder component are from a booster component, which is utilized to increase the voltage at a boost-strap node within each decoder subcomponent to facilitate performing read operations. To counter the parasitic elements, each regulator subcomponent can include one or more capacitors, where the number of capacitors and total capacitance value can be determined based on the distance the associated decoder subcomponent is from the booster component.